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applications, but biasing was invented so that these separate voltages could be obtained from a single supply Second, transistors are remarkably temperature sensitive, inviting a condition called thermal runaway Thermal runaway will rapidly destroy a bipolar transistor, since collector current quickly and uncontrollably increases to damaging levels as the temperature rises; unless the amplifier is temperature stabilized to nullify this effect The dominant biasing schemes to obtain both temperature stabilization and single-supply operation are base-biased emitter feedback, voltage-divider emitter feedback, collector feedback, diode feedback, and active bias All five are found in Class A and AB operation, while Class B and C amplifiers can implement other methods Which bias circuit to adopt depends on the desired circuit costs, complexity, stability, and other considerations Base-biased emitter feedback (Fig 361) works in the following way: The base resistor RB, the 07-V base-to-emitter voltage drop VBE, and the emitter resistor RE are all in series, in addition to being in parallel with the power supply (VCC), as shown in Fig 362 As the collector current IC increases because of a rise in the transistor s temperature, the emitter current through the emitter resistor will also increase, which increases the voltage dropped across RE This action lowers the voltage that would normally be dropped across the base resistor, and, since the voltage drops around a closed loop must always equal the voltage rises, the reduction in voltage across RB decreases the base current, which then lowers the collector current The capacitor CE located across RE bypasses the RF signal around the emitter resistor to stop excessive RF
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Figure 361 A C-E amplifier with base-biased emitter
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Downloaded from Digital Engineering Library @ McGraw-Hill (wwwdigitalengineeringlibrarycom) Copyright 2004 The McGraw-Hill Companies All rights reserved Any use is subject to the Terms of Use as given at the website
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Figure 362 A C-E amplifier displaying its V
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gain degeneration in this circuit The higher the voltage across RE, the more temperature stable the amplifier, but the more power will be wasted in RE because of VE2/RE, as well as the decreased AC signal gain if RE is not bypassed by a low-reactance capacitor Standard values of VE for most HF (amateur band) designs are between 2 to 4 V to stabilize VBE However, UHF amplifiers and above will try to completely avoid emitter resistors One voltage source is also supplying all of the biasing required for the basebiased emitter feedback circuit for the proper operation of the NPN transistor, since RB and RC are accurately allocating the suitable voltages to both the collector and the base with the appropriate polarity through a single power supply This is due to the following: The collector resistor, the collector-emitter junction, and the emitter resistor are all in series with each other, and share VCC s voltage Thus, the collector-to-emitter voltage is equal to VCC, minus the voltage drop across the collector and emitter resistors of RC and RE, forcing the collector to be correctly reverse biased The base circuit is also properly forward biased by the following action: The base resistor, the emitter-base junction, and the emitter resistor are in all series and share the VCC power supply s voltage So, the voltage drop across RB will be equal to VCC minus the normal emitter-base voltage drop of 07 V and the voltage drop across the emitter resistor And since the voltage drop across the emitter-base and the emitter resistor are kept relatively low, most of the power supply s voltage is dropped across RB, properly forward biasing the transistor s base In fact, the base current, and thus the collector current, can be increased by decreasing the value of the base resistor However, because of the inclusion of the emitter resistor
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