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RE and the emitter resistor s bypass capacitor CE and their small but unavoidable values of stray inductance, the base-biased emitter feedback circuit is not normally employed in microwave amplifiers; gain reduction and possibly instability problems are caused by these reactances One of the more common of the low-cost bias schemes, with a higher temperature stability than the above method, is the voltage divider emitter feedback biasing circuit of Fig 363 This circuit is temperature stable because the current through the voltage divider of R1 and R2 is significantly higher than the base current, and any rise in the device s temperature, which will increase the base current, will not substantially vary the voltage across R2, which is equal to the voltage at the base in respect to ground; thus maintaining a constant voltage from base to ground In addition, just as in the base-biased emitter feedback discussed above, when the emitter current rises with an increase in the transistor s junction temperature, the top of the emitter resistor will turn more positive But as the base is always around 07 V more positive than the emitter itself, the base-emitter junction will now have an actual decrease in the voltage dropped across it when referenced to the common emitter lead, thus reducing IC to its desired amplitude For sensitive applications, we can go even further to increase temperature stabilization The most common method is diode temperature compensation, shown in Fig 364 Two diodes, D1 and D2, which are attached to the transistor s heat sink or to the device itself, will carefully track the transistor s
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Figure 363 A voltage divider emitter feedback biased
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Downloaded from Digital Engineering Library @ McGraw-Hill (wwwdigitalengineeringlibrarycom) Copyright 2004 The McGraw-Hill Companies All rights reserved Any use is subject to the Terms of Use as given at the website
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Figure 364 A diode temperature-compensated C-E
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temperature changes This is accomplished by the diode s own decrease in its internal resistance with any increase in heat, which reduces the diode s forward voltage drop, thus lowering the transistor s base-emitter voltage, and diminishing any temperature-induced current increase in the BJT Only one diode, or transistors or thermistors, may also be found in temperature compensation circuits for amplifiers A prevalent and very low cost biasing scheme for RF and microwave circuits, but with less thermal stability than above, is collector feedback bias The circuit, as shown in Fig 365, employs only two resistors and a transistor, and has very little lead inductance because of the emitter s direct connection to ground Its temperature bias stabilization functions thus: As the temperature increases, the transistor will start to conduct more current from the emitter to the collector But the base resistor is directly connected to the transistor s collector, and not to the top of the collector resistor as in the above biasing techniques, so any rise in IC permits more voltage to be dropped across the collector resistor This forces less voltage to be dropped across the base resistor, which decreases the base current and, consequently, IC The discussion on active bias can be found in Class A active bias for microwave amplifiers in Sec 332 FETs can utilize a common Class A biasing technique called source bias, a form of self-bias (Fig 366) With field-effect transistors, unlike bipolar junction transistors, no gate current will flow with an input signal present; so the
Downloaded from Digital Engineering Library @ McGraw-Hill (wwwdigitalengineeringlibrarycom) Copyright 2004 The McGraw-Hill Companies All rights reserved Any use is subject to the Terms of Use as given at the website
Amplifier Design
Amplifier Design
drain current will always be equal to the source current However, source current does flow through the source resistor RS, creating a positive voltage at the top of this resistor Now, since the common-source FET s source is shared by both the drain and the gate circuits, and the gate will always be at zero volts with respect to ground since no gate current equals no voltage drop across RG the gate is now negative with respect to the common source This allows the FET to be biased at its Class A, AB, or B Q points, depending on the value chosen for RS, while a capacitor can be inserted across RS to restrain the bias voltage to a steady DC value
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