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Figure 121 Zero-bias Schottky diode I-V curves showing forward voltage and the resultant forward current
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Figure 122 The current flow through the emitter, base, and collector of a bipolar NPN transistor
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is always a small value, since the majority of the electrons over 99 percent are attracted by the positive potential on the much larger collector, where they continue to flood into the collector s positive bias supply This action is what forms the transistor s output current From the foregoing explanation, we see that IE IB IC and IB IE IC , meaning that the currents through a transistor are completely proportional Thus, if the emitter current doubles, then so will the currents in the base and the collector But more important, this also means that if a small external bias or signal should increase this small base current, then a proportional but far greater emitter and collector current will flow through the transistor This will produce voltage amplification if the collector current is sent through a high output resistance
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Downloaded from Digital Engineering Library @ McGraw-Hill (wwwdigitalengineeringlibrarycom) Copyright 2004 The McGraw-Hill Companies All rights reserved Any use is subject to the Terms of Use as given at the website
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The input of a common-emitter transistor has a low resistance because of its forward bias, so any signal inserted into the base-emitter junction will be across this low input resistance, thus causing the bipolar transistor to be current controlled by both the DC bias and any external signal voltages This is shown in the BJT s characteristic curves of Fig 123 The input signal, such as an RF or audio signal, will then add to or subtract from the DC bias voltage that is across the transistor Before significant collector current can flow, the transistor s emitter-base barrier voltage VBE of approximately 06 V (for silicon) must be overcome This task is performed by the base bias circuit In a linear amplifier, the initial transistor s operating point is set by the bias circuits to be around 07 V in order to allow any incoming signal to be able to swing above and below this amount The region of active amplification of a BJT is only about 02 V wide, so any voltage between saturation (08 V) and cutoff (06 V) is the only range that a semiconductor is capable of amplifying in a linear manner Between these two VBE values of 06 and 08 V, the IB, and thus the IC, is controlled A BJT can be thought of as a current-controlled resistance, with a tiny base current controlling the transistor s resistance, which influences the much larger emitter-to-collector current This collector current is then made to run through a high load resistance, generating an amplified output voltage Some high-frequency power transistors may be internally impedance matched to increase their normally very low input and output impedances (as low as 05 ohm), while some metal-can transistors may be found with four leads; with one lead attached to the metal can itself, which is then grounded to provide an RF shield A few of the more common transistor specifications found in BJT data sheets are:
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Figure 123 The characteristic curves for a bipolar transistor
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Downloaded from Digital Engineering Library @ McGraw-Hill (wwwdigitalengineeringlibrarycom) Copyright 2004 The McGraw-Hill Companies All rights reserved Any use is subject to the Terms of Use as given at the website
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BVCBO , the collector-to-base breakdown voltage, the amplitude of collector voltage that will normally break down the collector junction PD(MAX), the maximum total power dissipation a transistor is capable of in an ambient air temperature of 25 C TJ(MAX), the maximum internal junction semiconductor material breaks down temperature before the
IC(MAX), the maximum collector current of the BJT fT , the current gain bandwidth product, the frequency that a commonemitter transistor will be at a beta of unity fae , the beta cutoff frequency, the frequency that the BJT s beta decreases to 707 percent of its low frequency value ICEO , the temperature-dependent leakage current that occurs from the emitter to the collector with the base open
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