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A positive-negative (PN) junction diode (Fig 117) is composed of both N- and P-type semiconductor materials that have been fused together The N-type material will contain a surplus of electrons, called the majority carriers, and only a small number of holes, the minority carriers The reason for this overabundance of electrons and lack of holes is the insertion of impurities, called doping, to the pure (or intrinsic) semiconductor material This is accomplished by adding atoms that have five outer shell, or valence, electrons, as compared to the four valence electrons of intrinsic silicon The P-type material will have a surplus of holes and a deficiency of electrons within its crystal lattice structure due to the doping of the intrinsic semiconductor material with atoms that contain three valence electrons, in contrast to the four valence electrons of pure silicon Thus, P-type semiconductor current is considered to be by hole flow through the crystal lattice, while the N-type semiconductor s current is created by electron flow In a diode with no bias voltage (Fig 118), electrons are drawn toward the P side, while the holes are attracted to the N side At the fused PN junction a depletion region is created by the joining of these electrons and holes, generating neutral electron-hole pairs at the junction itself, while the depletion region on either side of the PN junction is composed of charged ions If the semiconductor material is silicon, then the depletion region will have a barrier potential of 07 V This depletion region will not increase above this 07 value, however, since any attempted rise in majority carriers will now be repulsed by this same barrier voltage When a voltage is applied to the PN junction of sufficient amplitude, and of the suitable polarity, the semiconductor diode junction will be forward biased (Fig 119) This will cause the barrier voltage to be neutralized, and electrons will then be able to flow freely The bias, consisting of the battery, has a positive terminal which repulses the holes but attracts the electrons, while the negative battery terminal repels the electrons into the positive terminal This action produces a current through the diode If a reverse bias is applied to a diode s terminals, as shown in Fig 120, the depletion region will begin to enlarge This is caused by the holes being attracted to the battery s negative terminal, while the positive terminal draws in the electrons, forcing the diode to function as a very high resistance Except for some small leakage current, very little current will now flow through the diode The depletion region will continue to expand
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FIGURE 117 The semiconductor diode, showing internal die and bond wires
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DEPLETION REGION
+++++ +++++ +++++ +++++
--------------------
+++ +++ +++ +++ +++ +++ +++ +++ +++ +++
+ 07 V
FIGURE 118
A diode shown with zero bias and its formed depletion region
10 V
BIAS
ELECTRON FLOW
+++++ +++++ +++++ +++++
-++-+ -+-++
-++ -++-+ -+-
00 V
RECOMBINATION
FIGURE 119 A diode with suf cient forward bias to conduct electrons
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10 V
REVERSE BIAS
SMALL LEAKAGE CURRENT
+++ +++ +++ +++
++++ ++++ ++++ ++++
100 V
DEPLETION REGION
FIGURE 120
A diode with reverse bias applied and the resultant reverse leakage current ow
until the barrier potential equals that of the bias potential, or until breakdown occurs, causing unchecked reverse current flow, and therefore damaging or destroying the diode itself As shown in the characteristic curves for a typical silicon diode (Fig 121), roughly 07 V will invariably be dropped across a forward-biased silicon diode, no matter how
IR mA 70 50 30 50 VR 06 20 50 80 IR mA 07 08 40 30 VF
ROOM TEMP HIGH TEMP
FIGURE 121
The characteristic curves of a silicon diode
One
FIGURE 122
Three common small-signal diode packages
much its forward current increases This is because of the small value of dynamic internal resistance inherent in the diode s semiconductor materials Miniature glass and plastic diode packages (Fig 122) are utilized for low-current circuits, while power diodes are used for high forward currents of up to 1500 A These are some of the more important rectifier diode specifications: IF(MAX): Maximum forward current that can flow through the diode before its semiconductor material is damaged IR: Diode s temperature-dependent reverse leakage current while in reverse bias PIV: Reverse-biased diode s peak inverse voltage, which is the maximum reverse voltage that should be placed across its terminals
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