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slide-stub tuner s impedance values, and the VCC s amplitude, the amplifier remains stable under these diverse conditions, then there is a good likelihood that it will not oscillate under almost any adverse real-life situation that it may be subjected to Another oscillation mechanism in some strongly nonlinear saturated PAs, particularly Class C s, is caused by variations in the internal instantaneous collector capacitance of the power transistor versus its changing voltage levels This particular mechanism is actually modifying the value of one of the transistor s own reactive elements over time, and can cause what is referred to as parametric oscillations These parametric oscillations can normally be diagnosed rapidly, since they will most often be seen on a spectrum analyzer at frequencies that are at one-half or at one-third of the PA s own design frequency It may be necessary to de-Q a Class AB power amplifier s base and/or collector bias inductor with a parallel resistor to force its stability This empirically derived resistor should be of the highest possible resistance value so as not to decrease the PA s performance needlessly Still, these resistors may not be necessary, but since this form of self-oscillation is relatively common, it is prudent to leave a set of unstuffed pads available on the PCB for possible resistor placement in parallel with the RFCs Decreasing the low-frequency gain of a PA stage, which is naturally at an increased level, will assist in amplifier stability This is discussed further under Sec 358 The proper RF grounding of the transistor s emitter leads will help in both maintaining gain and avoiding oscillations, since even the smallest amount of inductance in this path to ground can prove disastrous to a power transistor In fact, even the naturally occurring parasitic inductances and capacitances in the passive elements that are used for the PA s biasing, coupling, and decoupling must be modeled during the software simulation phase to prevent unnecessary and expensive tweaking of the completed physical power amplifier When a PA is tested alone on the bench for stability it may not oscillate, but when placed in circuit on the system s PCB, and attached to its driver amplifier, it may This effect is caused by the increased RF feedback paths on the system board, especially those contributed by the common DC bias lines and ground returns, as well as the complex interaction mechanisms between all stages and their components The cure for these feedback paths is better general RF decoupling, by identifying and eliminating any parasitic effects created by paralleled RF decoupling capacitors (see anti-resonance discussion in Sec 113), and by removing any component-to-component electromagnetic (EM) coupling issues by physically separating all RF hot parts by distance The unavailability of a sufficient groundplane, or a groundplane that is excessively segmented, can create uncontrollable instability in a PA The cure is a new layout, with a large, dedicated groundplane that is not broken up by any traces, and that has a large number of vias from the top ground pour, where the PA itself is located, down to the next layer of the PCB, which is where the main groundplane should be located Indeed, any power amplifier must, especially in today s competitive market, not self-destruct if placed in a shorted or opened state If the power transistor has the appropriate heat sinking, it will have a much stronger chance of withstanding very poor return losses caused by missing or shorted loads
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All wideband RF power amplifiers should incorporate some type of compensation to maintain a flat gain to within 2 dB or better across their entire bandwidth This is needed due to a transistor s inclination to possess a higher gain of 6 dB per octave at its lower frequencies than at its higher frequencies The increased gain can cause low-frequency
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