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CYU 81 CYU 82 CYU 83 CYU 84 CYU 85 CYU 86 CYU 87 CYU 88 CYU 89 1655 V VQ = 065 V; IQ = 37 mA 01 1392 V Both diodes conduct (a) Neither conducts (b) Both conduct (c) Only D2 conducts (d) Only D1 conducts 15436 V 806 V; 2% 88%
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Section 1: Semiconductors 81 In a semiconductor material, the net charge is zero
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This requires the density of positive charges to be equal to the density of negative charges Both charge carriers (free electrons and holes) and ionized dopant atoms have a charge equal to the magnitude of one electronic charge Therefore the charge neutrality equation (CNE) is:
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+ po + Nd no Na = 0
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where no = Equilibrium negative carrier density po = Equilibrium positive carrier density
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Na = Ionized acceptor density + Nd
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Semiconductors and Diodes
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RS D + vS + _ R1 R1 vL _
= Ionized donor density
The carrier product equation (CPE) states that as a semiconductor is doped the product of the charge carrier densities remains constant: no po = Constant For intrinsic silicon at T = 300 K:
2 Constant = nio pio = n2 = pio io
Figure P87
88 In the circuit of Figure P87, vS = 6 V and
R1 = RS = RL = 500 Determine iD and vD graphically, using the diode characteristic of the 1N461A minimum current of 1 mA to be above the knee of its i-v characteristic a What should be the value of R to establish 5 mA in the circuit b With the value of R determined in part a, what is the minimum value to which the voltage E could be reduced and still maintain diode current above the knee Use V = 07 V
= 15 1016
1 m3
= 225 1032
1 m2
89 Assume that the diode in Figure P89 requires a
The semiconductor material is n- or p-type depending on whether donor or acceptor doping is greater Almost all dopant atoms are ionized at room temperature If intrinsic silicon is doped:
NA Na = 1017
1 m3
Nd = 0
Determine: a If this is an n- or p-type extrinsic semiconductor b Which are the major and which the minority charge carriers c The density of majority and minority carriers
E=5V
82 If intrinsic silicon is doped:
Na Na = 1017
1 m3
+ Nd Nd = 5 1018
1 m3
Figure P89
Determine: a If this is an n- or p-type extrinsic semiconductor b Which are the majority and which the minority charge carriers c The density of majority and minority carriers
810 In Figure P810, a sinusoidal source of 50 V rms
drives the circuit Use the offset diode model for a silicon diode a What is the maximum forward current b What is the peak inverse voltage across the diode
V = 07 V
+ 50 Vrms _
83 Describe the microscopic structure of semiconductor
materials What are the three most commonly used semiconductor materials
84 Describe the thermal production of charge carriers in
a semiconductor and how this process limits the operation of a semiconductor device
220
Figure P810
85 Describe the properties of donor and acceptor dopant
atoms and how they affect the densities of charge carriers in a semiconductor material
811 Determine which diodes are forward biased and
which are reverse biased in each of the con gurations shown in Figure P811
+5 V R +10 V R +5 V
86 Physically describe the behavior of the charge
carriers and ionized dopant atoms in the vicinity of a semiconductor pn junction that causes the potential (energy) barrier that tends to prevent charge carriers from crossing the junction
Section 2: Diode Circuit Models 87 Find voltage vL in the circuit of Figure P87, where
D is an ideal diode Use values of vS < and > 0
(a) (b)
Figure P811
Part II
Electronics
10 +
_ 10 V
R (c) +5 V
_ 12 V R (d) _5V R
+ v (t) ~ S _
10 4V
vo (t)
_ (e) _ 10 V
Figure P811 Continued
Figure P814
815 The diode in the circuit shown in Figure P815 is 812 In the circuit of Figure P812, nd the range of Vin
for which D1 is forward-biased Assume ideal diodes
1 k + Vin _ D2 + _ 5V D1 1 k
fabricated from silicon and: iD = Io (evD /VT 1) where at T = 300 K: Io = 250 10 12 A VT = kT 26 mV q
vS = 42 V + 110 cos( t) mV = 377 rad/s R=7k
Figure P812
813 Determine which diodes are forward biased and
which are reverse-biased in the con gurations shown in Figure P813 Assuming a 07-V drop across each forward-biased diode, determine the output voltage
+5 V R +5 V _5 V +5 V _5 V D1 D2 D3 D4 (a) vout
Determine, using superposition, the DC or Q point current through the diode: a Using the DC offset model for the diode b By iteratively solving the circuit characteristic (ie, the DC load line equation) and the device characteristic (ie, the diode equation)
+ V _ S
+ VD iD
Figure P815
816 If the diode in the circuit shown in Figure P815 is
fabricated from silicon and:
_ 10 V R
+15 V R +5 V 0V _10 V D1 D2 D3 vout _5 V +5 V D1 D2
iD = Io [evD /VT 1] where at T = 300 K: kT 26 mV q
vout
Io = 2030 10 15 A
VT =
vS = 53 V + 7 cos( t) mV
= 377 rad/s
R = 46 k
Figure P813
Determine, using superposition and the offset (or threshold) voltage model for the diode, the DC or Q point current through the diode
814 Sketch the output waveform and the voltage
transfer characteristic for the circuit of Figure P814 Assume ideal diode characteristics, vS (t) = 10 sin (2,000 t)
817 If the diode in the circuit shown in Figure P815 is
fabricated from silicon and: iD = Io [evD /VT 1]
8
Semiconductors and Diodes
where at T = 300 K: Io = 250 10 12 A kT VT = 26 mV q
+ _ VS1
R + VD
+ _ VS2
vS = 42 V + 110 cos( t) mV = 377 rad/s R=7k
and the DC operating point or quiescent point (Q point) is: IDQ = 05458 mA VDQ = 3795 mV
Figure P820
Section 3: Recti ers and Voltage Supplies 821 Find the average value of the output voltage for the
circuit of Figure P821 if the input voltage is sinusoidal with an amplitude of 5 V Let V = 07 V
100 nF + +
determine the equivalent small-signal AC resistance of the diode at room temperature at the Q point given
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