vb.net barcode reader source code Transistor Fundamentals in Software

Printer QR Code ISO/IEC18004 in Software Transistor Fundamentals

9
Denso QR Bar Code Scanner In None
Using Barcode Control SDK for Software Control to generate, create, read, scan barcode image in Software applications.
Painting QR Code In None
Using Barcode generator for Software Control to generate, create Quick Response Code image in Software applications.
Transistor Fundamentals
QR Code Recognizer In None
Using Barcode decoder for Software Control to read, scan read, scan image in Software applications.
Denso QR Bar Code Printer In Visual C#.NET
Using Barcode encoder for .NET Control to generate, create QR Code image in .NET applications.
no forward collector current) ows, and the transistor acts virtually as an open circuit; the transistor is said to be in the cutoff region In practice, there is always a leakage current owing through the collector, even when VBE = 0 and IB = 0 This leakage current is denoted by ICEO When the BE junction becomes forwardbiased, the transistor is said to be in the active region, and the base current is ampli ed by a factor of at the collector: IC = IB (912)
Denso QR Bar Code Maker In .NET Framework
Using Barcode maker for ASP.NET Control to generate, create QR Code image in ASP.NET applications.
QR Code JIS X 0510 Creator In .NET
Using Barcode generator for Visual Studio .NET Control to generate, create QR-Code image in VS .NET applications.
Since the collector current is controlled by the base current, the controlled-source symbol is used to represent the collector current Finally, when the base current becomes suf ciently large, the collector-emitter voltage, VCE , reaches its saturation limit, and the collector current is no longer proportional to the base current; this is called the saturation region The three conditions are described in Figure 922 in terms of simple circuit models The corresponding collector curves are shown in Figure 923
Quick Response Code Creation In VB.NET
Using Barcode maker for .NET Control to generate, create QR image in VS .NET applications.
Create EAN-13 In None
Using Barcode generation for Software Control to generate, create GTIN - 13 image in Software applications.
Cutoff state conditions: VBE < V B IB = 0 IC = ICEO VCE 0
Code 39 Generation In None
Using Barcode maker for Software Control to generate, create Code 39 Full ASCII image in Software applications.
Drawing EAN128 In None
Using Barcode creation for Software Control to generate, create GTIN - 128 image in Software applications.
ICEO IB = 0
Draw Data Matrix 2d Barcode In None
Using Barcode creation for Software Control to generate, create Data Matrix ECC200 image in Software applications.
Draw ANSI/AIM Code 128 In None
Using Barcode creator for Software Control to generate, create Code 128 Code Set A image in Software applications.
Active state conditions: VBE = V B IB > 0 IC = B I VCE > V
NW-7 Encoder In None
Using Barcode encoder for Software Control to generate, create Uniform Symbology Specification Codabar image in Software applications.
EAN 13 Maker In Java
Using Barcode creator for BIRT Control to generate, create EAN-13 image in BIRT applications.
IB + E
Bar Code Encoder In Java
Using Barcode generator for Java Control to generate, create bar code image in Java applications.
Drawing European Article Number 13 In VB.NET
Using Barcode drawer for .NET framework Control to generate, create European Article Number 13 image in VS .NET applications.
C IC Saturated state conditions: VBE = V B IB > 0 IC < B I VCE = Vsat IB + E + Vsat
Make Code 3/9 In C#
Using Barcode creation for Visual Studio .NET Control to generate, create Code 39 Extended image in .NET framework applications.
Paint Code128 In Java
Using Barcode generator for Java Control to generate, create Code128 image in Java applications.
Figure 922 npn BJT large-signal model
Create Data Matrix 2d Barcode In Java
Using Barcode generator for Eclipse BIRT Control to generate, create ECC200 image in BIRT reports applications.
Barcode Recognizer In .NET Framework
Using Barcode Control SDK for ASP.NET Control to generate, create, read, scan barcode image in ASP.NET applications.
50 45 40 35 30 25 20 15 10 5 0
Saturation region
Collector current, mA
Linear region
Cut off region 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Collector-emitter voltage, V
Figure 923 BJT collector characteristic
Example 97 illustrates the application of this large-signal model in a practical circuit and illustrates how to determine which of the three states is applicable, using relatively simple analysis
Part II
Electronics
F O C U S O N M E T H O D O L O G Y
Using Device Data Sheets One of the most important design tools available to engineers is the device data sheet In this box we illustrate the use of a device data sheet for the 2N3904 bipolar transistor This is an npn general-purpose ampli er transistor Excerpts from the data sheet are shown below, with some words of explanation The complete data sheet can be found in the accompanying CD-ROM
2N3904 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier
TO-92
ELECTRICAL CHARACTERISTICS:
The section on electrical characteristics summarizes some of the important voltage and current speci cations of the transistor For example, you will nd breakdown voltages (not to be exceeded), and cutoff currents In this section you also nd important modeling information, related to the large-signal model described in this chapter The large-signal current gain of the transistor, hF E , or , is given as a function of collector current Note that this parameter varies signi cantly (from 30 to 100) as the DC collector current varies Also important are the CE and BE junction saturation voltages (the batteries in the large-signal model of Figure 922)
Electrical Characteristics Symbol Parameter
TA = 25 C unless otherwise noted
Test Conditions
Units
OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current IC = 10 mA, IB = 0 IC = 10 A, IE = 0 IE = 10 A, IC = 0 VCE = 30 V, VEB = 0 VCE = 30 V, VEB = 0 40 60 60 50 50 V V V nA nA
ON CHARACTERISTICS hF E DC Current Gain IC IC IC IC IC = 01 mA, VCE = 10 V = 10 mA, VCE = 10 V = 10 mA, VCE = 10 V = 50 mA, VCE = 10 V = 100 mA, VCE = 10 V 40 70 100 60 30
VCE(sat) VBE(sat)
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
IC = 10 mA, IB = 10 mA IC = 50 mA, IB = 50 mA IC = 10 mA, IB = 10 mA IC = 50 mA, IB = 50 mA 0065
02 03 085 095
V V V V
(Continued)
9
Transistor Fundamentals
(Concluded)
THERMAL CHARACTERISTICS:
This table summarizes the thermal limitations of the device For example, one can nd the power rating, listed at 625 mW at 25 C Note that in the entry for the total device power dissipation, derating information is also given Derating implies that the device power dissipation will change as a function of temperature, in this case at the rate of 5 mW/ C For example, if we expect to operate the diode at a temperature of 100 C, we would calculate a derated power of: P = 625 mW 75 C 0005 mW/ C = 250 mW Thus, the diode operated at a higher temperature can dissipate only 250 mW
Copyright © OnBarcode.com . All rights reserved.