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mW mW/ C
C/W
C/W
TYPICAL CHARACTERISTIC CURVES:
Device data sheets always include characteristic curves that may be useful to a designer In this example, we include the base-emitter on voltage as a function of collector current, for three device temperatures We also show the power dissipation versus ambient temperature derating curve for three different device packages The transistor s ability to dissipate power is determined by its heat transfer properties; the package shown above is the TO-92 package; the SOT-223 and SOT-23 packages have different heat transfer characteristics, leading to different power dissipation capabilities
VBB(ON) Base-Emitter on Voltage (V)
VCE = 5V 08 06 125 C 04 02 01 40 C 25 C
PD Power Dissipation (W)
Base-Emitter ON Voltage vs Collector Current 100 075
Power Dissipation vs Ambient Temperature
TO-92 05 SOT-23
SOT-223
025 0 0
1 10 lc Collector Current (mA)
25 50 75 100 125 150 Temperature ( C)
Part II
Electronics
EXAMPLE 97 LED Driver
Problem
Design a transistor ampli er to supply a LED The LED is required to turn on and off following the on-off signal from a digital output port of a microcomputer The circuit is shown in Figure 924
RC 5V
Solution
Known Quantities: Microcomputer output resistance and output signal voltage and current levels; LED offset voltage, required current, and power rating; BJT current gain and base-emitter junction offset voltage Find: Collector resistance, RC , such that the transistor is in the saturation region when the computer outputs 5 V; power dissipated by LED Schematics, Diagrams, Circuits, and Given Data:
RB Vcomputer
= 95
Microcomputer: output resistance = RB = 1 k ; Von = 5 V; VOFF = 0 V; I = 5 mA Transistor: VCC = 5 V; V = 07 V; = 95 LED: V LED = 14 V; ILED > 15 mA; Pmax = 100 mW
Assumptions: Use the large-signal model of Figure 922 Analysis: When the computer output voltage is zero, the BJT is clearly in the cutoff
Figure 924 LED driver circuit
region, since no base current can ow When the computer output voltage is VON = 5 V, we wish to drive the transistor into the saturation region Recall that operation in saturation corresponds to small values of collector-emitter voltages, with typical values of VCE around 02 V Figure 925(a) depicts the equivalent base-emitter circuit when the computer output voltage is VON = 5 V Figure 925(b) depicts the collector circuit, and Figure 925(c), the same collector circuit with the large-signal model for the transistor (the battery VCEsat ) in place of the BJT From this saturation model we write: VCC = RC IC + V LED + VCEsat
425
IC 425 + 14 V _ 5V 14 V = VLED C VCE sat = 02 V E Rs 5V
1,000
+ 5V _
+ VCE _ 07 V
Figure 925 (a) BE circuit for LED driver; (b) Equivalent collector circuit of LED driver, assuming that the BJT is in the linear active region; (c) LED driver equivalent collector circuit, assuming that the BJT is in the saturation region
9
Transistor Fundamentals
or RC = VCC V LED VCEsat 34 = IC IC
We know that the LED requires at least 15 mA to be on; let us suppose that 30 mA is a reasonable LED current to ensure good brightness, then the value of collector resistance that would complete our design is, approximately, RC = 113 With the above design, the BJT LED driver will clearly operate as intended to turn the LED on and off But how do we know that the BJT is in fact in the saturation region Recall that the major difference between operation in the active and saturation regions is that in the active region the transistor displays a nearly constant current gain, , while in the saturation region the current gain is much smaller Since we know that the nominal for the transistor is 95, we can calculate the base current using the equivalent base circuit of Figure 925(a) and determine the ratio of base to collector current: IB = VON V 43 = 43 mA = RB 1,000 Thus, it can
The actual large-signal current gain is therefore equal to 30/43 = 67 be reasonably assumed that the BJT is operating in saturation We nally compute the LED power dissipation: PLED = V LED IC = 14 03 = 42 mW < 100 mW
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