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Comments: Using the large-signal model of the BJT is quite easy, since the model
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simply substitutes voltage sources in place of the BE and CE junctions To be sure that the correct model (eg, saturation versus active region) has been employed, it is necessary to verify either the current gain or the value of the CE junction voltage Current gains near the nominal indicate active region operation, while small CE junction voltages denote operation in saturation
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Focus on Computer-Aided Tools: An Electronics WorkbenchTM simulation of the
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circuit analyzed in this example is available in the CD-ROM that accompanies the book Try changing the value of the collector resistance and see the resulting changes in collector current and collector-emitter voltage For what approximate value of RC does the BJT go back into the active region
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Large-Signal Ampli er for Diode Thermometer
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In 8 we explored the use of a diode as the sensing element in an electronic thermometer (see Focus on Measurements: Diode Thermometer ) In the present example, we illustrate the design of a transistor ampli er for such a diode thermometer The circuit is shown in Figure 926
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Solution: Known Quantities Diode and transistor ampli er bias circuits; diode
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voltage versus temperature response Find Collector resistance and transistor output voltage versus temperature Schematics, Diagrams, Circuits, and Given Data VCC = 12 V; large signal = 1885; VBE = 075 V; RS = 500 ; RB = 10 k
Part II
Electronics
VCC RC
RS RB 2N3904 V
IN914
Figure 926 Large signal ampli er for diode thermometer
Assumptions Use a 1N914 diode and a 2N3904 transistor Analysis With reference to the circuit of Figure 926 and to the diode
temperature response characteristic of Figure 927(a), we observe that the midrange diode thermometer output voltage is approximately 11 V Thus, we should design the transistor ampli er so that when vD = 11 V the transistor output is in the center of the collector characteristic for minimum distortion Since the collector supply is 12 V, we choose to have the Q point at VCEQ = 6 V
13 125 12 115 Volts Volts 11 105 1 095 09 0 20 40 60 80 Temperature, C 100 9 8 7 6 5 4 3 0 20 40 60 80 Temperature, C 100
Figure 927(a) Diode voltage temperature dependence
Figure 927(b) Ampli er output
Knowing that the diode output voltage at the quiescent point is 11 V, we compute the quiescent base current vD IBQ RB VBEQ = 0 IBQ = vD VBEQ 11 075 = 35 A = RB 10,000
9
Transistor Fundamentals
Knowing , we can compute the collector current: ICQ = IBQ = 1885 35 A = 66 mA Now we can write the collector equation and solve for the desired collector resistance: VCC ICQ RC VCEQ = 0 RC = VCC VCEQ 12 V 6 V = = 0909 k ICQ 66 mA
Once the circuit is designed according to these speci cations, the output voltage can be determined by computing the base current as a function of the diode voltage (which is a function of temperature); from the base current, we can compute the collector current and use the collector equation to determine the output voltage, vout = vCE The result is plotted in Figure 927(b)
Comments Note that the transistor ampli es the slope of the temperature
by a factor of approximately 6 Observe also that the common emitter ampli er used in this example causes a sign inversion in the output (the output voltage now decreases for increasing temperatures, while the diode voltage increases) Finally, we note that the design shown in this example assumes that the impedance of the voltmeter is in nite This is a good assumption in the circuit shown in this example, because a practical voltmeter will have a very large input resistance relative to the transistor output resistance Should the thermometer be connected to another circuit, one would have to pay close attention to the input resistance of the second circuit to ensure that loading does not occur
Focus on Computer-Aided Tools An Electronics WorkbenchTM version of
this example is available in the accompanying CD If you wish to verify the results obtained here, you may change the diode temperature by opening the 1N914 diode template, clicking on the Edit button, and changing the parameter TNOM (temperature in degrees Celsius) in sheet 2 of the template You may also wish to look at the parameters of the 2N3904 transistor
The large-signal model of the BJT presented in this section treats the BE junction as an offset diode and assumes that the BJT in the linear active region acts as an ideal controlled current source In reality, the BE junction is better modeled by considering the forward resistance of the pn junction; further, the BJT does not act quite like an ideal current-controlled current source These phenomena will be partially taken into account in the small-signal model introduced in 10
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