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Transistor Fundamentals
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30 Drain Current, mA 25 20 15 10 5 0 0 33333 66667 100000 133333 166667 200000 Gate-source Voltage, V
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15 13 Drain Current, A 10 8 5 3 0 3 0 28571 57143 85714 114286 142857 171429 200000 Drain-Source Voltage, V
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Figure 931(a) n-channel enhancement MOSFET drain curves
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Figure 931(b) n-channel enhancement MOSFET as a controlled current source
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voltage There is an obvious analogy between the MOSFET drain characteristic and the BJT collector characteristic, but we also note the important differences: In the BJT collector curves, the family of curves is indexed as a function of base current, while the drain characteristic is a function of gate voltage Thus, we can think of the BJT as a current-controlled device, while the MOSFET is intrinsically a voltage-controlled device Note also that to completely describe the behavior of a BJT we needed to also de ne a separate base junction curve in terms of the base current variation versus the base-emitter voltage, while MOSFETs do not require an additional gate characteristic curve, because the gate is insulated and no gate current ows Finally, we observe that if the drain-source voltage is increased above a breakdown value, VB , the drain current rapidly increases, eventually leading to device destruction by thermally induced damage This condition de nes the last region of operation of the MOSFET, namely, the breakdown region The four regions of operation are summarized in Table 91 The equations describing the ohmic and saturation regions are also given in the table Note that in these equations we have introduced another important MOSFET physical parameter, IDSS It is also important to note that the equations describing MOSFET operation are nonlinear
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Table 91 Regions of operation and equations of n-channel enhancement MOSFET Cutoff region: vGS < VT Ohmic or triode region: vDS < 025(vGS VT ), vGS > VT 2 VT (equivalent drain-to-source resistance) RDS = 2IDSS (VGS VT ) vDS iD RDS Saturation region: vDS vGS VT , vGS > VT IDSS (vGS VT )2 = k (vGS VT )2 2 VT Breakdown region: vDS > VB iD =
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Examples 98 to 910 illustrate the use of the MOSFET drain curves of Figure 931(b) in establishing the Q-point of a MOSFET ampli er
EXAMPLE 98 MOSFET Q-Point Graphical Determination
Problem
Determine the Q point for the MOSFET in the circuit of Figure 932
iD (mA) 100 vGS = 28 V
26 V
60 52 40
24 V 22 V G 20 V + VGG vGS D iD + vDS S RD
18 V 16 V 14 V 10 vDS (V)
Figure 932 n-channel enhancement MOSFET circuit and drain characteristic for Example 98
Solution
Known Quantities: MOSFET drain resistance; drain and gate supply voltages; MOSFET
drain curves
Find: MOSFET quiescent drain current, iDQ , and quiescent drain-source voltage, vDSQ
RD = 100
Schematics, Diagrams, Circuits, and Given Data: VGG = 24 V; VDD = 10 V;
Assumptions: Use the drain curves of Figure 932 Analysis: To determine the Q point we write the drain circuit equation, applying KVL:
VDD = RD iD + vDS 10 = 100iD + vDS The resulting curve is plotted as a dashed line on the drain curves of Figure 932 by noting that the drain current axis intercept is equal to VDD /RD = 100 mA and that the drain-source voltage axis intercept is equal to VDD = 10 V The Q point is then given by the intersection of the load line with the VGG = 24 V curve Thus, iDQ = 52 mA and vDSQ = 475 V
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Transistor Fundamentals
Comments: Note that the Q point determination for a MOSFET is easier than for a BJT,
since there is no need to consider the gate circuit, because gate current ow is essentially zero In the case of the BJT, we also needed to consider the base circuit
EXAMPLE 99 MOSFET Q-Point Calculation
Problem
Determine the Q point for the MOSFET in the circuit of Figure 932
Solution
Known Quantities: MOSFET drain resistance; drain and gate supply voltages; MOSFET
universal equations
Find: MOSFET quiescent drain current, iDQ , and quiescent drain-source voltage, vDSQ
RD = 100
Schematics, Diagrams, Circuits, and Given Data: VGG = 24 V; VDD = 10 V;
Assumptions: Use the MOSFET universal equations of Table 91 Analysis: We determine the threshold voltage by observing (in the curves of Figure 932)
that the smallest gate voltage for which the drain current is nonzero is 14 V Thus, VT = 14 V From the same curves, the drain current corresponding to 2VT is approximately 95 mA Thus IDSS = 95 mA Knowing these two parameters and the gate voltage, we apply the appropriate equation in Table 91 Since vGS = vGG > VT , we write: iDQ = IDSS and vDSQ = VDD RD iDQ = 10 100 485 10 3 = 515 V
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