vb.net barcode reader source code Part II in Software

Printer Quick Response Code in Software Part II

Part II
QR Code Decoder In None
Using Barcode Control SDK for Software Control to generate, create, read, scan barcode image in Software applications.
Quick Response Code Generation In None
Using Barcode maker for Software Control to generate, create QR Code 2d barcode image in Software applications.
Electronics
Quick Response Code Scanner In None
Using Barcode scanner for Software Control to read, scan read, scan image in Software applications.
Encoding QR Code In Visual C#
Using Barcode creator for .NET Control to generate, create QR Code image in .NET applications.
Let us now reverse the control voltages and set v = 0 and v = V > VT It is very straightforward to show that in this case, regardless of the value of vin , both Q1 and Q2 are always off; therefore, the transmission gate is essentially an open circuit The analog transmission gate nds common application in analog multiplexers and sample-and-hold circuits, to be discussed in 15
Denso QR Bar Code Generation In Visual Studio .NET
Using Barcode generator for ASP.NET Control to generate, create QR Code image in ASP.NET applications.
QR Code 2d Barcode Printer In Visual Studio .NET
Using Barcode maker for Visual Studio .NET Control to generate, create QR Code ISO/IEC18004 image in .NET framework applications.
Check Your Understanding
Drawing QR In Visual Basic .NET
Using Barcode generation for .NET Control to generate, create QR-Code image in .NET applications.
Paint Bar Code In None
Using Barcode generator for Software Control to generate, create barcode image in Software applications.
910 Determine the operating region of the MOSFET of Example 910 when vGS = 35
Code 128 Code Set C Encoder In None
Using Barcode creation for Software Control to generate, create Code 128 image in Software applications.
ECC200 Creator In None
Using Barcode maker for Software Control to generate, create ECC200 image in Software applications.
911 Determine the appropriate value of RS if we wish to move the operating point of the MOSFET of Example 910 to vDSQ = 12 V Also nd the values of vGSQ and iDQ Are these values unique 912 Show that the CMOS bidirectional gate described in the Focus on Measurements: MOSFET Bidirectional Analog Gate box is off for all values of vin between 0 and V whenever v = 0 and v = V > VT 913 Find the lowest value of RD for the MOSFET of Example 99 that will place the MOSFET in the ohmic region
Generating ANSI/AIM Code 39 In None
Using Barcode creation for Software Control to generate, create Code-39 image in Software applications.
Encode UPC - 13 In None
Using Barcode generation for Software Control to generate, create European Article Number 13 image in Software applications.
DEPLETION MOSFETs AND JFETs
ANSI/AIM Codabar Maker In None
Using Barcode creation for Software Control to generate, create Codabar image in Software applications.
Generate Barcode In VS .NET
Using Barcode generator for Reporting Service Control to generate, create barcode image in Reporting Service applications.
To complete this brief discussion of eld-effect transistors, we summarize the characteristics of depletion-mode MOSFETs and of JFETs While the construction details of these two families of devices differ, their operation is actually quite similar, and we shall develop one set of equations describing the operation of both Depletion MOSFETs The construction of a depletion-mode MOSFET and its circuit symbol are shown schematically in Figure 936 We note that the only difference with respect to the enhancement type devices is the addition of a lightly dopes n-type region between the oxide layer and the p-type substrate The presence of this n region results in the presence of conducting channel in the absence of an externally applied electric eld, as shown in Figure 937(a) Thus, depletion MOSFETs are normally on or normally conducting devices Since a channel already exists for vGS = 0, increasing the gate-source voltage will further enhance conductivity by drawing additional electrons to the channel, to reduce channel resistance If, on the other hand, vGS is made negative, the channel will be depleted of charge carriers, and channel resistance will decrease When vGS is suf ciently negative (less than a threshold voltage, Vt ), the channel electrons are all repelled into the substrate, and the channel ceases to conduct This corresponds to the cutoff region, depicted in Figure 937(b) It is important to note that the threshold voltage is negative in a depletion-mode device If we now repeat the qualitative analysis illustrated in Figure 930 for an enhancement-mode device for a depletion-mode MOSFET, we see that for a given drain-source voltage,
Scan Barcode In Java
Using Barcode decoder for Java Control to read, scan read, scan image in Java applications.
EAN13 Encoder In .NET Framework
Using Barcode maker for ASP.NET Control to generate, create EAN-13 Supplement 5 image in ASP.NET applications.
Gate Source n+ n p Bulk (substrate) Drain n+
Generating Code 3 Of 9 In Java
Using Barcode maker for Java Control to generate, create Code-39 image in Java applications.
UPC-A Supplement 5 Creator In None
Using Barcode encoder for Online Control to generate, create UPC A image in Online applications.
D iD + VDS G _ + V GS _ S
Print 2D Barcode In Java
Using Barcode encoder for Java Control to generate, create 2D Barcode image in Java applications.
Creating Bar Code In Objective-C
Using Barcode maker for iPad Control to generate, create bar code image in iPad applications.
Figure 936 n-channel depletion MOSFET construction and circuit symbol
9
Transistor Fundamentals
Gate Source n+ n p Bulk (substrate) Drain n+
+ V _ DD
VGS < VT Gate Source n+
VGG +_ Drain n+
p Bulk (substrate)
+ V _ DD
When the gate voltage is zero, the n-type channel permits drain current flow
When the gate voltage is below the threshold voltage, the n-type channel has been depleted of charge carriers, and the MOSFET is in the cutoff region
VGG +_
Gate
------------
VGG +_
Gate
------------
Source + + + + + + + + + + + + Drain n+ n p Bulk (substrate) Depletion regions (c) Channel n+
+ V _ DD
Source + + + + + + + + + + + + Drain n+ n p Bulk (substrate) Depletion regions (d) Pinched-off channel n+
+ V _ DD
When the gate source voltage is increased above the threshold voltage for small values of drain-source voltage, the MOSFET is in the ohmic region and acts as a voltage-controlled resistor
Figure 937 Operation of n-channel depletion MOSFET
As the drain-source voltage is increased, the channel is eventually pinched off, and the transistor is in the saturation region
iD (mA) Ohmic vDS > vGS VP Constant current vGS VP vGS = 3 V 20 2V 16 1V 12 8 0V 4 1 V 0 2 V 3 V 4 V 0 4 8 12 16 20 vDS (V)
as we increase the gate-source voltage, the transistor acts as a variable resistor, dependent on the gate-source voltage This corresponds to the ohmic region of operation of the depletion-mode MOSFET, depicted in Figure 937(c) As the drain-source voltage is increased for a xed gate-source voltage, the relative strength of the eld will decrease near the drain end of the device, until the channel is pinched off When the pinch-off condition is reached, the transistor acts as a constant-current source, and is in the saturation region This condition is depicted in Figure 937(d) In effect, a depletion-mode MOSFET acts very much like an enhancement mode device with a negative threshold voltage Unlike an enhancement MOSFET, however, the depletion MOSFET
Copyright © OnBarcode.com . All rights reserved.