vb.net barcode reader source code Transistor Fundamentals in Software

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Transistor Fundamentals
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a Find the ratio IC /IB for VCE = 10 V and IB = 100 A, 200 A, and 600 A b The maximum allowable collector power dissipation is 05 W for IB = 500 A Find VCE
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5 k 2N3904 50 V + _ 20 A
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iC (mA) 100 90 80 70 60 50 40 30 20 10 0 2 4 6 8 10 12 14 16 18 vCE (V) IB = 100 A 600 A 500 A 400 A 300 A 200 A
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Figure P911
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912 For the circuit given in Figure P912, verify that the
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transistor operates in the saturation region by computing the ratio of collector current to base current (Hint: With reference to Figure 922, V = 06 V, Vsat = 02 V)
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RB = 50 k 57 V
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RC = 1 k
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= 200 10 V
Figure P99
[Hint: A reasonable approximation for the power dissipated at the collector is the product of the 913 It has been found that VE in the circuit of Figure collector voltage and current: P = IC VCE P913 is 1 V If the transistor has V = 06 V, where P is the permissible power dissipation, determine: IC is the quiescent collector current, a VB VCE is the operating point collector-emitter voltage] b IB c IE 910 Given the circuit of Figure P910, assume both d IC transistors are silicon-based with = 100 Determine: e a IC1 , VC1 , VCE1 f b IC2 , VC2 , VCE2
+5V +30 V 5 k 750 k 62 k 20 k
Figure P912
Q2 20 k 5 k Q1 47 k 5 V
Figure P913 Figure P910
914 The circuit shown in Figure P914 is a
common-emitter ampli er stage Determine the Th venin equivalent of the part of the circuit e containing R1 , R2 , and VCC with respect to the terminals of R2 Redraw the schematic using the Th venin equivalent e
911 Use the collector characteristics of the 2N3904
npn transistor to determine the operating point (ICQ , VCEQ ) of the transistor in Figure P911 What is the value of at this point
Part II
Electronics
VCC R1 RC RL vS
= 20 V = 130 = 18 M R2 = 300 k =3k RE = 1 k =1k RS = 06 k = 1 cos(628 103 t) mV
R1 C + Rs Vi _ + V _s R2 RE C RC
B C E
918 Shown in Figure P918 is a common-emitter
ampli er stage implemented with an npn silicon transistor and two DC supply voltages (one positive and one negative) instead of one The DC bias circuit connected to the base consists of a single resistor Determine VCEQ and the region of operation
+ V _ CC
C RL + V _o
VCC RC RL vS
= 12 V VEE = 4 V = 100 RB = 100 k =3k RE = 3 k =6k RS = 06 k = 1 cos(628 103 t) mV
Figure P914
915 Shown in Figure P914 is a common-emitter
ampli er stage implemented with an npn silicon transistor Determine VCEQ and the region of operation VCC R1 RC RL vS = 15 V = 100 = 68 k R2 = 117 k = 200 RE = 200 = 15 k RS = 09 k = 1 cos(628 103 t) mV
RS + V _S C
+ VCC _ RC
B C E
RE + VEE _ C
916 Shown in Figure P914 is a common-emitter
ampli er stage implemented with an npn silicon transistor Determine VCEQ and the region of operation VCC R1 RC RL vS = 15 V = 100 = 68 k R2 = 117 k =4k RE = 200 = 15 k RS = 09 k = 1 cos(628 103 t) mV
Figure P918
919 Shown in Figure P919 is a common-emitter
ampli er stage implemented with an npn silicon transistor The DC bias circuit connected to the base consists of a single resistor; however, it is connected directly between base and collector Determine VCEQ and the region of operation VCC RC RL vS = 12 V = 130 RB = 325 k = 19 k RE = 23 k = 10 k RS = 05 k = 1 cos(628 103 t) mV
917 The circuit shown in Figure P917 is a
common-collector (also called an emitter follower) ampli er stage implemented with an npn silicon transistor Determine VCEQ at the DC operating or Q point VCC R1 RS RL = 12 V = 82 k = 07 k = 16
B C E
= 130 R2 = 22 k RE = 05 k
+ VCC _ C
+ VCC _ RS C R2 RE RL
B C E
Rs + V _s
RE C
+ V _S
Figure P917
Figure P919
9
Transistor Fundamentals
920 Shown in Figure P919 is a common-emitter
ampli er stage implemented with an npn silicon transistor Determine VCEQ and the region of operation VCC RC RL vS = 15 V C = 05 F = 170 RB = 22 k = 33 k RE = 33 k = 17 k RS = 70 = 1 cos(628 103 t) mV
For the enhancement-mode MOSFET: IDSS = 7 mA VT = +5 V
For the depletion-mode MOSFET: VP = 5 V IDSS = 7 mA a Are these n- or p-channel devices b Which is the depletion-mode device The enhancement-mode device c For each device, state the conditions for the operation in the active region in terms of the voltages shown for the device and the threshold or pinch-off voltages given above
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