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938 Shown in Figure P938(a) is a common-source
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ampli er stage implemented with an n-channel depletion-mode MOSFET with the static i-v characteristics shown in Figure P938(b) The Q point and component values are: VGSQ = 15 V VDSQ = 136 V RD = 10 k RS = 400 RL = 32 k RSS = 600 vi [t] = 2 sin( t) V Determine the DC supply voltage required for the Q point and component values speci ed
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Figure P935
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936 In the circuit of Figure P935, a common-source
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ampli er stage, RG is an actual component in the circuit and VGG has been eliminated (ie, made equal to zero) A partial solution for the DC operating or Q point gives: VGSQ = 4368 V IDQ = 1324 mA IDSS = 18 mA VT = 6 V RG = 17 M RS = 33 k RL = 3 k C = 05 F VDD = 20 V VGG = 00 V vi [t] = 1 cos(628 103 t) V Determine RD so that VDSQ = 6 V
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Saturation (ohmic) 25 AC load line 1 Slope = 760 5V 20 Q point 15 = VGSQ VGS (V) 10 05 0
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6563 ma 20 i D (ma) IDQ
937 In the circuit shown in Figure P935, a
common-source ampli er stage, RG is an actual component in the circuit and VGG has been eliminated (ie, shorted) A partial solution for the Q point gives: IDQ = 297 mA VGSQ = 356 V
Figure P938
0 0 10 VDSQ 20
VDS(V) (b)
05 VDD -15 30 40 Cutoff
Determine RD so that VDSQ = 6 V VP = 6 V IDSS = 18 mA RG = 17 M RS = 12 k RL = 3 k C = 05 F VDD = 20 V VGG = 00 V vi (t) = 1 cos(628 103 t) V
Transistor Ampli ers and Switches
he aim of this chapter is to describe the application of transistors as ampli ers and switches Small-signal transistor ampli ers can be analyzed by means of linear small-signal models that make it possible, through the use of linear circuit analysis techniques, to determine an ampli er s input and output impedance and current and voltage gain Small-signal models of transistor ampli er circuits also permit analysis of multistage ampli ers The chapter begins with the analysis of the BJT h parameters; these are linear approximations that are valid in the neighborhood of an operating point and are directly derived from the base and collector characteristic curves Subsequently, the common-emitter BJT ampli er is discussed in some detail, and the commonbase and emitter-follower ampli ers are brie y introduced Next, a similar analysis is conducted for MOSFET ampli ers The material on ampli ers closes with a general discussion of multistage transistor ampli ers and of ampli er frequency response In addition to serving as the essential component of electronic ampli ers, transistors nd common application in switching circuits and logic gates The last section of the chapter describes BJT and MOSFET inverters and gates and introduces the two major families of logic devices, TTL and CMOS
10
Transistor Ampli ers and Switches
Upon completing this chapter, you should be able to:
Use small signal models of bipolar and eld-effect transistors to construct small signal ampli er models, from which voltage and current gain and input and output resistance can be computed Qualitatively evaluate the frequency response characteristics of a transistor ampli er and understand the major mechanisms limiting an ampli er s frequency response Understand the major requirements in the design of multistage ampli ers Understand the switching characteristics of BJTs and MOSFETs and be able to analyze the fundamental behavior of TTL and CMOS logic gates
SMALL-SIGNAL MODELS OF THE BJT
Small-signal models for the BJT take advantage of the relative linearity of the base and collector curves in the vicinity of an operating point These linear circuit models work very effectively provided that the transistor voltages and currents remain within some region around the operating point This condition is usually satis ed in small-signal ampli ers used to magnify low-level signals (eg, sensor signals) For the purpose of our discussion, we use the hybrid-parameter (h-parameter) small-signal model of the BJT, to be discussed presently Note that a small-signal model assumes that the DC bias point of the transistor has been established As was done in 9, the following convention will be used: each voltage and current is assumed to be the superposition of a DC component (the quiescent voltage or current) and a small-signal AC component The former is denoted by an uppercase letter, and the latter by an uppercase letter preceded by the symbol Thus, iB = IBQ + iC = ICQ + vCE = VCEQ + IB IC VCE
6 5 i (t) (mA) 4 3 2 1 0 0 1 2 3 t (s) 4 5 6 i (t) = 5 + 05 sin ( t)
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