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circuit illustrated in this example has been included in the accompanying CD-ROM You may wish to compare run the simulation using the ideal transistor model, as well as the models for the 2N3904 and 2N2222 transistors, to observe the difference in voltage gains
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Check Your Understanding
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105 Compute the actual voltage gain, vout /vS , of the ampli er of Example 105 for the following source-load pairs: a RS = 50 , RL = 150
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b RS = 50 , RL = 1,500 c RS = 500 , RL = 150 What conclusions can you draw from these results
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106 Calculate the current gains for the ampli er parameters of Check Your Understanding 105 107 Repeat Example 105 for hie = 2 k and hf e = 60
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Other BJT Ampli er Circuits The common-emitter ampli er is a commonly employed con guration but is by no means the only type of BJT ampli er Other ampli er con gurations are also used, depending on the speci c application requirements Each type of ampli er is classi ed in terms of properties such as input and output resistance, and voltage and current gain Rather than duplicate the detailed analysis just conducted for the common-emitter ampli er, we summarize the properties of the three more common BJT ampli er circuits in Table 102, which depicts the ampli er circuits and summarizes their properties The methodology employed to derive these results is completely analogous to that surveyed in the previous section Examples and analysis of these ampli ers may be found in the homework problems
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Table 102 BJT ampli er con gurations
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VCC VCC VCC RE R1 + vin R2 RC + + + C E vout vin R2 RE + vout vin RB CB CC + vout R1 +VCC RC
Ampli er circuit
Properties
Input impedance: medium Output impedance: medium Voltage gain: high Current gain: high Phase shift: 180
Input impedance: high Output impedance: low Voltage gain: low Current gain: medium Phase shift: 0
Input impedance: low Output impedance: high Voltage gain: high Current gain: low Phase shift: 0
FET SMALL-SIGNAL AMPLIFIERS
The discussion of FETs as ampli ers is analogous to that of BJT ampli ers In particular, the common-source ampli er circuit is equivalent in structure to the common-emitter ampli er circuit studied earlier, and the common-drain ampli er (source follower) is analogous to the common-collector ampli er (emitter follower) In this section, we discuss the general features of FET ampli ers; to simplify the discussion, we have selected the n-channel enhancement MOSFET
10
Transistor Ampli ers and Switches
R1 D R C G
+ ~ _
v(t)
R2 RS RL
to represent the FET family Although some of the details differ depending on the speci c device, the discussion that follows applies in general to all FET ampli ers A summary of FET symbols was given in Figure 930 in 9; reviewing it will help you recognize a speci c device in a circuit diagram Figure 1024 depicts typical common-drain and common-source ampli ers, including coupling and bypass capacitors One of the great features of FETs, and especially MOSFETs, is the high input impedance that can be achieved because the gate is effectively insulated from the substrate material We shall illustrate this property in analyzing the source-follower circuit Before proceeding with the analysis of FET ampli ers, though, we shall discuss how one can construct a small-signal model analogous to the one that was obtained for the BJT In the case of MOSFETs, we can make use of the analytic relation between drain current and gate-source voltage, iD = k(vGS VT )2 k = IDSS /VT2 (1029)
(a) Common-drain amplifier VDD
to establish the Q point for the transistor, which is de ned by the quiescent voltages, VGSQ and VDSQ , and by the quiescent current, IDQ The quadratic relationship allows us to determine the drain current, IDQ , that will ow, given that vGS = VGSQ ; the parameters k and VT are a property of any given device Thus, IDQ = k(VGSQ VT )2 (1030)
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