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Comments: It will be instructive to compare these results with the Zener regulator
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examples of 8 (Examples 88, 89, and 810) Note that the Zener current is kept at a reasonably low level by the presence of the BJT (the load current is an ampli ed version of the base current) Further, disconnecting the load would result in cutting off the BJT, thus resulting in no Zener power dissipation This is a signi cant advantage over the designs of 8
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practical Zener regulator analyzed in this example is included in the accompanying CD-ROM You may wish to disconnect the load and verify that the Zener diode consumes no power
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Three-terminal voltage regulators are available in packaged form to include all the necessary circuitry (often including protection against excess heat dissipation) Regulators are rated in terms of the regulated voltage and power dissipation
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11
Power Electronics
Some types provide a variable regulated voltage by means of an external adjustment Because of their requirement for relatively large power (and therefore heat) dissipation, voltage regulators often need to be attached to a heat sink, a thermally conductive assembly that aids in the cooling process Figure 1112 depicts the appearance of typical heat sinks Heat sinking is a common procedure with many power electronic devices
Regulator case Cooling fins
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Regulator Heat sink In Out Gnd Low-power regulator High-power regulator
Aluminum heat sink
Figure 1112 Heat-sink construction for voltage regulators
Check Your Understanding
111 Repeat Example 101 using the TIP31 transistor (see Table 112)
POWER AMPLIFIERS AND TRANSISTOR SWITCHES
So far, we have primarily considered low-power electronic devices, either in the form of small-signal linear ampli ers, or as switches and digital logic gates (the latter will be discussed in more detail in 13) There are many applications, however, in which it is desirable to provide a substantial amount of power to a load Among the most common applications are loudspeakers (these can draw several amperes); electric motors and electromechanical actuators, which will be considered in greater detail in s 16 through 18, and DC power supplies, which have already been analyzed to some extent in 8 In addition to such applications, the usage and control of electric power in industry requires electronic devices that can carry currents as high as hundreds of amperes, and voltages up to thousands of volts Examples are readily found in the control of large motors and heavy industrial machinery The aim of the present section is to discuss some of the more relevant issues in the design of power ampli ers, such as distortion and heat dissipation, and to introduce power switching transistors Power Ampli ers The brief discussion of power ampli ers in this section makes reference exclusively to the BJTs; this family of devices has traditionally dominated the eld of power
Part II
Electronics
1 Exceeding the maximum allowable current IC max on a continuous basis will result in melting the wires that bond the device to the package terminals 2 Maximum power dissipation is the locus of points for which VCE IC = Pmax at a case temperature of 25 C The average power dissipation should not exceed Pmax 3 The instantaneous value of vCE should not exceed VCEmax ; otherwise, avalanche breakdown of the collector-base junction may occur
It is important to note that the linear operation of the transistor as an ampli er is also limited by the saturation and cutoff limits The operation of a BJT as a linear ampli er is rather severely limited by these factors Consider, rst, the effect of driving an ampli er beyond the limits of the linear active region, into saturation or cutoff The result will be signal distortion For example, a sinusoid ampli ed by a transistor ampli er that is forced into saturation, either by a large input or by an excessive gain, will be compressed around the peaks, because of the decreasing device gain in the extreme regions Thus, to satisfy these limitations and to fully take advantage of the relatively distortion-free linear active region of operation for a BJT the Q point should be placed in the center of the device characteristic to obtain the maximum symmetrical swing This point has already been discussed in 10 (see Example 103 and Figure 1016, in particular) The maximum power dissipation of the device, of course, presents a more drastic limitation on the performance of the ampli er, in that the transistor can be irreparably damaged if its power rating is exceeded Values of the maximum allowable collector current, IC max , of the maximum allowable transistor power dissipation, Pmax , and of other relevant power BJT parameters are given in Table 112 for a few typical devices Because of their large geometry and high operating
Table 112 Typical parameters for representative power BJTs MJE3055T Type Maximum IC (continuous) VCEO Power rating VCE sat VBE on npn 10 A 60 V 75 W 20@ IC = 4 A 11 V 8V TIP31 npn 3A 40 V 40 W 10 @ IC = 3 A 13 V 18 V MJE170 pnp 3 A 40 A 125 W 30 @ IC = 05 A 17 V 2 V
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