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Figure 1114 BJT switching waveforms
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EXAMPLE 113 Power BJT Switching Characteristics
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The MJE170 power BJT is now used as a switch Determine the delay time, rise time, and turn-off time for this transistor switch
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Known Quantities: BJT switch component values Find: td , tr , ts , and tf , as de ned in Figure 1114 Schematics, Diagrams, Circuits, and Given Data: Data sheets for the MJE170 ampli er
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may be found in the accompanying CD-ROM
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Focus on Computer-Aided Solutions: The analysis of this design has been conducted in simulation, using Electronics WorkbenchTM The simulation of this circuit may be found in the accompanying CD-ROM Comments: You may wish to substitute a power MOSFET or an IGBT in the same
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circuit to explore differences in switching behavior between devices
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Power MOSFETs MOSFETs can also be used as power switches, like BJTs The preferred mode of operation of a power MOSFET when operated as a switch is in the ohmic region, where substantial drain current can ow for relatively low drain voltages (see Table 91 and Figure 1055) Thus, a MOSFET switch is driven from cutoff to the ohmic
11
Power Electronics
vG V1
0 vGS V1 VGSP VT 0
t tr tf
t td (on) td (off)
Figure 1115 MOSFET switching waveforms
state by the gate voltage In an enhancement MOSFET, positive gate voltages are required to turn the transistor on; in depletion MOSFETs, either positive or negative voltages can be used To understand the switching behavior of MOSFETs, recall once again the parasitic capacitances that exist between pairs of terminals: CGS , CGD , and CDS As a consequence of these capacitances, the transistor experiences a turn-on delay, td(on) , corresponding to the time required to charge the equivalent input capacitance to the threshold voltage, VT As shown in Figure 1115, the rise time, tr , is de ned as the time it takes to charge the gate from the threshold voltage to the gate voltage required to have the MOSFET in the ohmic state, VGSP The turn-off delay time, td(off) , is the time required for the input capacitance to discharge, so that the gate voltage can drop and vDS can begin to rise As vGS continues to decrease, we de ne the fall time, tf , which is the time required for vGS to drop below the threshold voltage and turn the transistor off
F O C U S O N M E T H O D O L O G Y
Using Device Data Sheets One of the most important design tools available to engineers is the device data sheet In this box we illustrate the use of a device data sheet for the NDS8410 power MOSFET transistor Excerpts from the data sheet are shown below, with some words of explanation The complete data sheet can be found in the accompanying CD-ROM NDS8410 Single N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power eld effect transistors are produced using Fairchild s proprietary, high cell density, DMOS technology This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed Features
10A, 30V RDS(ON) = 0015 @ VGS = 10V RDS(ON) = 0020 @ VGS = 45V High density cell design for extremely low RDS(ON) High power and current handling capability in a widely used surface mount package
ABSOLUTE MAXIMUM RATINGS
This table summarizes the limitations of the device For example, one can nd the maximum allowable gate-source and drain source voltages, and the power rating
Part II
Electronics
Absolute Maximum Ratings Symbol VDSS VGSS ID
TA = 25 C unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous - Pulsed
NDS8410 30 20 10 50 25 12 1
Units V V A
Maximum Power Dissipation
TJ , TSTG
Operating and Storage Temperature Range
55 to 150
ELECTRICAL CHARACTERISTICS:
The table summarizing electrical characteristics is divided into various sections, including on characteristics, off characteristics, dynamic characteristics, and switching characteristics We focus on the last of these, and make reference to Figure 1115 Note how all of the relevant parameters shown in this gure are listed in the data sheet
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