barcode reader vb.net codeproject ELECTRICAL CHARACTERISTICS Symbol Parameter in Software

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ELECTRICAL CHARACTERISTICS Symbol Parameter
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TA = 25 C unless otherwise noted
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OFF CHARACTERISTICS BVDSS IDSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 A VDS = 24 V, VGS = 0 V Tj = 55 C IGSSF IGSSR Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
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VGS = 20 V, VDS = 0 V VGS = 20 V, VDS = 0 V
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ON CHARACTERISTICS VGS(ON) RDS(ON)
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Gate-Threshold Voltage Static Drain-Source On-Resistance
VDS = VGS , ID = 250 A VGS = 10 V, ID = 10 A VGS = 45 V, ID = 9 A
15 0013 0018 0015 002
ID(ON) gFS
On-State Drain Current Forward Transconductance
VGS = 10 V, VDS = 5 V VDS = 10 V, ID = 10 A
20 22
DYNAMIC CHARACTERISTICS CISS CDSS CISS Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 15 V, VGS = 0 V, f= 10 MHz 1350 800 300 pF pF pf
(Continued)
11
Power Electronics
(Concluded)
ELECTRICAL CHARACTERISTICS (Continued) Symbol Parameter Conditions
TA = 25 C unless otherwise noted
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SWITCHING CHARACTERISTICS (Note 2) tD(on) tT tD(off) tF Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 15 V, ID = 10 A, VGS = 10 V VDD = 10 V, ID = 1 A, VGEN = 10 V, RGEN = 6 14 20 56 31 46 56 14 30 25 100 80 60 ns ns ns ns nC nC nC
Insulated-Gate Bipolar Transistors (IGBTs) The insulated-gate bipolar transistor, or IGBT, is a hybrid device, combining features of both eld-effect and bipolar devices The circuit symbol of the IGBT is shown in Figure 111; a simpli ed equivalent circuit is shown in Figure 1116 The IGBT is a voltage-controlled device, like a MOSFET, but its performance is closer to that of a BJT The switching and conduction losses of the IGBT are lower than those of a MOSFET, and the switching speed is greater than that of a BJT (but somewhat lower than that of a MOSFET); the convenience of a MOSFET-like gate drive is an advantage over BJTs IGBTs can be rated up to 400 A and 1,200 V, and can have switching frequencies as high as 20 kHz These devices have in recent years found increasing application in medium-power applications, such as AC and DC motor drives
RMOD RBE
Figure 1116 IGBT simpli ed equivalent circuit
RECTIFIERS AND CONTROLLED RECTIFIERS (AC-DC CONVERTERS)
As explained in 8, one of the most immediate applications of the semiconductor diode is recti cation of AC voltages and currents, to convert AC waveforms to DC Recti cation can be achieved both with conventional diodes and with controlled diodes, such as thyristors A simple diode recti er can provide only a xed DC voltage level; however, variable DC supplies can be easily obtained with the aid of thyristors The aim of this section is to illustrate the basic features of diode recti ers, and to introduce thyristor-based controlled recti ers The basic diode half-wave recti er and also full-wave and bridge recti ers were discussed in Sections 83 and 84 In addition to the considerations noted in 8, one often has to take into account the nature of the load seen by such DC supplies
Part II
Electronics
In practice, loads are not always resistive, as will be seen in s 16 through 18, where circuit models for electromechanical actuators and electric motors are introduced A very common occurrence consists of a DC voltage supply providing current to a DC motor For the purpose of the present discussion, it will suf ce to state that a DC motor presents an inductive impedance to the voltage supply and requires a constant current from the supply to operate at a constant speed The circuit of Figure 1117 illustrates, as an example, a simple half-wave recti er connected to an RL load The circuit on top in Figure 1117, assuming an ideal diode, would present a serious problem during the negative half-cycle of the source voltage, since the requirement for continuity of current in the inductor (recall the discussion on continuity of inductor currents and capacitor voltages in 5) would be violated with D1 off Whenever the current ow through the inductor is interrupted (during the negative half-cycles of vAC ), the inductor attempts to build a yback voltage proportional to diL /dt Since the recti er does not provide any current during the negative half-cycle of the source voltage, the instantaneous inductor voltage could be very large and could lead to serious damage to either the motor or the recti er The circuit shown on the bottom in Figure 1117 contains a so-called freewheeling diode, D2 The role of D2 is to provide continuity of current when D1 is in the off state D2 is off during the positive half-cycle but turns on when D1 ceases to conduct, because of the yback voltage, LdiL /dt Rather than build up a large voltage, the inductor now has a path for current to ow, through D2 , when D1 is off Thus, the energy stored by the inductor during the positive half-cycle of vAC is utilized to preserve a continuous current through the inductor during the off period Figure 1118 depicts the load current for the circuit including the diode Note that D2 allows the energy-storage properties of the inductor to be utilized to smooth the pulselike supply current and to produce a nearly constant load current Analyzing the circuit on the bottom of Figure 1117, with vAC (t) = A sin( t) (115)
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