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Figure D.2 Resistor symbol and component designation.
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MISCELLANEOUS ELECTRONIC REFERENCE INFORMATION
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TABLE D.1 NUMBER
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RESISTOR COLOR CODE CHART COLOR BAND 1 BAND 2 BAND 3 BAND 4 OPTIONAL BAND 5
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100 10
1 2 3 4 5 6 7 8 9 1 2
N/A 1% tolerance 2% tolerance N/A N/A 0.5% tolerance 0.25% tolerance 0.1% tolerance 0.05% tolerance N/A 5% tolerance 10% tolerance
10 10
10 10
10 10 10
10 10 10
Fuses can be used within your application to limit current draw and protect circuits, wiring, and power supplies. Like home fuses, electronic fuses are rated in amperes and are available in a number of different board-mountable or in-line packages and cartridges. The symbol is shown in Fig. D.7. Fuses are not rated in regard to the voltage that can be applied to them. Capacitors are designed for storing electric charge. Their design typically consists of two metal plates separated by a nonconductive material called a dielectric. The capacitor symbol is shown in Fig. D.8. The charge placed on a capacitor is measured in farads (symbol F), and are measured in the units of coulombs/volt. A coulomb is a measure of 1.6 1019 electrons, making 1 F a very large number. Most capacitors are measured in millionths ( F) or trillionths (pF) of a farad.
Component Reference Designator = R or Pot
Wiper
Figure D.3
Potentiometer symbol.
APPENDIX D
Component Referen Designator = SW Momentary On Momentary Off
Circuit Closed when Button Pressed
Circuit Open when Button Pressed
Figure D.4 The two types of momentary switches (on and off).
The type of dielectric employed in a capacitor is usually used to reference the component; the most common types of capacitors are: Ceramic disk Polyester Tantalum Electrolytic Capacitors are either marked with their value or use a three-digit numbering scheme similar to the one used for resistors but with the value being referenced in picofarads. For example, a capacitor marked with 103 is understood to be 10 103 pF = 10,000 pF = 0.01 F
Where a capacitor stores energy in the form of a charge, inductors (or coils) store energy in the form of a magnetic eld. Inductors (Fig. D.9) are not often used in PIC microcontroller circuits except for switch-mode power supplies, which increase or decrease incoming power using the characteristics of coils to resist changes in current ow. Like the capacitor s farad unit of measurement, the normal values of an inductor are in millionths of a henry for the devices to be effective in a circuit. Modern application switching is accomplished by semiconductors, so named because their ability to conduct current can be controlled in different situations. The most basic of these circuits is the diode (Fig. D.10), which will pass current in only one direction.
Single Pole
Switch Closed
Double Pole
Switch Left
Left Switch Closed
Switch Open
Switch Right
Right Switch Closed
Figure D.5 Throw switches can have either a single set or two sets of contacts.
MISCELLANEOUS ELECTRONIC REFERENCE INFORMATION
Component Referen Designator = SW SPST Switch
Figure D.6 The schematic symbol for a single-pole, single-throw switch.
Component Referen Designator = F
Figure D.7
The fuse s schematic symbol.
Component Referen Designator = C + Polarity Indicator
In Some References, the Symbol is: + Polarity Indicator
Figure D.8
The capacitor schematic symbol.
Component Referen Designator = L
Figure D.9 symbol.
The inductor s schematic
Component Reference Designator = CR Line Corresponds to Ban on Component
Current Direction
Figure D.10 The diode s schematic symbol. Note that current ow through the inductor is indicated by the band around the device.
APPENDIX D
Collector
Motor Driver Circuit:
Input
Symbol:
Base Emitter
Transistor Operation: N P N
Emitter
Injected Holes Base Raising P Potential and Allowing Current to Base Flow from Collector Collector
Current Output = hFE or Beta times the Current
Figure D.11 NPN transistor schematic symbol, example application, and physical device.
The most basic transistor is the bipolar NPN transistor (Fig. D.11), which consists of two pieces of N-doped silicon sandwiching a piece of P-doped silicon. N-doped silicon has a material added to it that causes electrons to be available in the crystal lattice. P-doped silicon has a material added that causes there to be an af nity for accepting electrons in the crystal lattice. Bipolar transistors actually are variable switches in which the amount of current passing through the collector and emitter can be controlled by controlling the amount of current passed through the base. Figure D.11 shows a simple circuit for an inverter. When current is passed through the base to the emitter, the collector will pass the amount current to the emitter de ned using the formula Ice = Ibe hFE
where Ice is the current through the collector and emitter, and Ibe is the current through the base and the emitter. hFE, which is also known as beta, is the multiplication factor for the current owing through the base and emitter to the collector and emitter. For a common transistor such as the 2N3904 (of which I use a few of in this book), hFE is in the range of 150 to 200. Along with the NPN bipolar transistor that is turned on when current is applied to it, there is the PNP bipolar transistor that will pass current between its collector and emitter when current is drawn from it. This device is shown in Fig. D.12 and behaves similarly to the NPN transistor, with the amount of current passing through the collector and emitter being proportional to the current being drawn from it. The most popular form of transistors used today are the metal oxide silicon eld effect transistor (MOSFET). These components are much smaller and use a fraction of the power of the bipolar transistors. The basic type of MOSFET transistor is the N-channel device that is shown in Fig. D.13. When a positive voltage is applied to the gate, an electrical eld is set up in the P-doped silicon substrate. This eld will
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