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Use the procedure of Problem 10.3 to nd an expression for the current gain GI I2 =I1 for the ideal buckboost converter of Fig. 10-6. Ans: GI 1 D =D
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Show that the expressions for Imax and Imin shown on the buck-boost converter waveforms of Fig. 10-7 are identical to those determined for the boost converter in Problem 10.19.
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Execute hPrb10_15.CIRi of Problem 10.15 and plot v2 V 3 . ripple voltage v2 . Ans: v2 0:153 V
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From the plot, determine peak-to-peak
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AC load lines, 82 Active elements, 2 Active mode of transistor operation, 77 Adjustable-output voltage regulator, 272 Ampli cation factor, 116, 208, 219 Ampli ers: bu er, 269 common-base (CB), 170 171 common-collector (CC), 99, 165, 171 172 common-drain (CD), 200, 202 common-emitter (CE), 168 170 common-gate (CG), 200, 203 common-grid, 224 common-source (CS), 200, 201 202 di erence, 195 di erential, 268 di erentiating, 262 emitter-follower (EF), 99, 165 exponential, 278 xed, 156 frequency e ects (see Frequency e ects in ampli ers) integrating, 262 263 inverse log, 278 inverting, 259 260 logarithmic, 263 noninverting, 260 source-follower (SF), 200, 202 summer, 261 262 triode, 205 207 unity follower, 269 (See also Small-signal midfrequency BJT ampli ers; Small-signal midfrequency FET ampli ers; Operational ampli ers) Amplitude ratio, 227 Anode, 30, 115 Avalanche breakdown, 32 Average power, 14
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Average value of sinusoidal function, 13 15 cuto frequency, 249 Band-pass lter, 226 Base-emitter-junction resistance, 233 Base ohmic resistance, 232 Battery source, 2 Bias: -independent, 79 in bipolar junction transistors, 78 81 cathode, 132 considerations in transistors, 136 143 constant-base-current, 136 137 constant-emitter-current, 137 138 drain-feedback, 114 in MOSFET, 114 Q-point-bounded, 140 141 shunt feedback, 138 in triode, 115 117 voltage divider, 107 Bias line: drain feedback, 114 of JFET, 107 108 of triode grid, 116, 132 Bipolar junction transistors (BJT), 70 102 ac load lines in, 82 ampli ers, small-signal midfrequency, 163 174 uncertainty in, 136 138 bias and, 78 81 capacitors in, 82 common-base (CB) connection, 71 common-base terminal characteristics of, 71 common-emitter (CE) connection, 71 common-emitter terminal characteristics of, 71 72 constant-base-current bias in, 136 137 constant-emitter-current bias in, 137 138 construction of, 70 71 current relationships in, 77 78
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INDEX
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Bipolar junction transistors (BJT) (continued) dc load lines in, 78 81 high-frequency hybrid- model for, 232 234 nonlinear-element stabilization of, 139 140 shunt-feedback bias in, 138 SPICE model for, 72 76 stability-factor analysis in, 139 symbols for, 70 temperature e ects in, 136 138 Bode plot, 227 229 asymptotic, 229 Boost converter, 290 292 Break frequency, 228 Buck converter, 289 290 Buck-boost converter, 292 294 Bu er ampli er, 269 Bypass capacitors, 82, 229 231
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Capacitance, 1 depletion, 33 di usion, 33 Miller, 235 236 Capacitor current, 289 Capacitors: in ampli ers, 229 232 in bipolar junction transistors, 82 bypass, 82, 229 231 coupling, 82, 229, 231 232 Cathode, 30, 115 Cathode bias, 132 Cathode follower, 224 Circuit analysis, 1 15 elements, 1 2 laws, 3 network theorems in, 4 8 SPICE elements in, 2 3 steady-state, 4 Clamping, 44 Clipping circuits, 44 Collector characteristics: of common-base (CB) connection, 71 of common-emitter (CE) connection, 72 Common-base (CB) ampli er, 170 171 Common-base (CB) connection, 164 165 Common-base (CB) transistor, 71 Common-collector (CC) ampli er, 99, 165, 171 172 Common diode, 30 Common-drain (CD) ampli er, 200, 202 Common-emitter (CE) ampli er, 168 170 Common-emitter (CE) transistor, 71 72 Common-emitter (CE) hybrid parameter, 164 Common-emitter (CE) transistor connection, 163 164 Common-gate (CG) ampli er, 200, 203 Common-grid ampli er, 224 Common-mode gain, 260 Common-mode rejection, 268 Common-mode rejection ratio, 260 261
Common-source (CS) ampli er, 200, 201 202 Common-source (CS) JFET, 103 Conductance, 1 Constant-base-current bias, 136 137 Constant-emitter-current bias, 137 138 Constants of proportionality for dc currents, 77 Control grid, 115 Controlled current source, 2 Controlled voltage source, 2 Converters: boost, 290 292 buck, 289 290 buck-boost, 292 294 Corner frequency, 228 Coupling capacitors, 82, 229, 231 232 Critical inductance, 289 Current: ampli cation, 168 Kirchho s law of, 3 sources, 2 Current-gain ratio, 227 Cuto , 77 high-frequency point, 232 low-frequency point, 229
DC load line: in bipolar junction transistors, 78 81 in diodes, 38 in JFETs, 107 109 in vacuum triode ampli ers, 117 DC steady state, 4 DC voltage source, 2 Darlington transistor pair, 92 Default transistor model, 73, 74 Dependent current source, 2 Dependent voltage source, 2 Depletion capacitance, 33 Depletion-enhancement-mode MOSFET, 128 Depletion-mode MOSFET, 111 Di erence ampli er, 195 Di erential ampli er, 268 Di erentiating ampli er, 262 Di usion capacitance, 33 Diodes, 30 69 de nition of, 30 ideal, 30 31 light-emitting (LED), 66 recti er, 30 reference, 46 varactor, 69 Zener, 46 48 (See also Semiconductor diodes) Drain characteristics: of JFET, 103 of MOSFET, 111 Drain-feedback bias, 114 Driving-point impedance, 5
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