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Dynamic load line, 36 Dynamic resistance of diode, 38 E ective value, 14 Element: active, 2 circuit, 1 2 passive, 1 SPICE, 2 3 Element speci cation statement, 3 Emitter-follower (EF) ampli er, 99, 165 Enhancement-mode operation, 111 Equivalent circuits: for BJT, small signal, 163, 164 for FET, small signal, 200 201 hybrid-, 233 for semiconductor diodes, 38 40 tee, 166 167 Exponential ampli er, 278 Feedback resistor, 259 Field-e ect transistors (FET), 103 117 ampli ers, small-signal midfrequency, 200 205 high-frequency model for, 234 235 insulated-gate (IGFET), 110 junction (see Junction eld-e ect transistor) metal-oxide-semiconductor (see Metal-oxidesemiconductor eld-e ect transistor) Q-point-bounded bias for, 140 141 SPICE model of, 105 107, 111 114 Filter(s): application in operational ampli ers, 264 band-pass, 226 high-pass, 229 230 in semiconductor diodes, 42 low-pass, 264 Filtering, waveform, 42 44 Fixed bias, 156 Forward-biased diode, 30 Forward current, 30 Forward current gain: in common-base (CB) connection, 165 in common-collector (CC) connection, 182 in common-emitter (CE) connection, 164 Frequency: cuto , 249 break or corner, 228 response, 227 transfer function, 227 Frequency e ects in ampli ers, 226 238 Bode plots, 227 229 of bypass and coupling capacitors, 229 232 high-frequency FET models, 234 235 high-frequency hybrid- BJT model, 232 234 Miller capacitance, 235 236 response, 227 229 response using SPICE, 236 238
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Frequency modulation transmitter, 69 Full-wave recti er, 40 Gain ratio, 227 Generic transistor model, 73, 75 Graphical circuit analysis: of JFET, 110 of semiconductor diodes, 35 38 Grid bias line of triode ampli er, 116, 132 Grid characteristics of vacuum triodes, 115 116 Grids in vacuum tubes (triodes), 115, 116 Gyrator, 284 h (or hybrid) parameters, 8 Half-cycle average value, 14 Half-wave recti er, 40 High-frequency region, 232 High-pass lter, 229 230 Hybrid (or h) parameter(s), 8 CE, 164 models in BJT ampli ers, 163 166 Hybrid- BJT model, high-frequency, 232 235 Ideal current source, 2 Ideal diode, 30 31 Ideal voltage source, 2 Impedance(s): driving-point, 5 match or change, 168 re ection rule, FET ampli er, 210 Inductance, 1 critical, 289 Inductor current, 287 288 Inductor voltage, 287 288 Input characteristics: of common-base (CB) connection, 71 of common-emitter (CE) connection, 72 of vacuum triodes, 116 Input resistance: in common-base (CB) connection, 165 in common-collector (CC) connection, 182 in common-emitter (CE) connection, 164 Instantaneous power, 14 Instantaneous values, 13 15 Integrating ampli er, 262 263 Inverse log ampli er, 278 Inverse mode of transistor operation, 77 Inverting adder, 261 Inverting ampli er, 259 260, 261 Inverting di erentiator, 262 Inverting input operational ampli er, 258 Inverting integrator, 262 Inverting summer ampli er (adder), 261 Junction eld-e ect transistor (JFET), 103 110 bias line of, 107 109 bipolar junction transistor compared with, 104 in common-source (CS) connection, 103
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Junction eld-e ect transistor (JFET) (continued) construction of, 103 graphical analysis for, 110 load line of, 107 109 n-channel and p-channel, 103 shorted-gate parameters of, 104 SPICE model of, 105 107 symbols for, 103 104 terminal characteristics of, 103 105 Kirchho s current law, 3 Kirchho s voltage law, 3 Lag network, 228 Law(s): circuit, 3 Kirchho s current and voltage, 3 Ohm s, 1 Lead network, 228 Level clamp, 271 Level-discriminator circuit, 68 Light-emitting diode (LED), 66 Limiter circuit, 272 Linear controlled source, 2 Linear mode of transistor operation, 77 Linear network, 4 Load line: ac, 82 dc, 38, 117 diode, 35 38 dynamic, 36 JFET, 107 109 MOSFET, 114 115 Logarithmic ampli er, 263 Low-frequency region, 229 Luminous intensity, 66 Maximum symmetrical swing, 87, 95 Metal-oxide-semiconductor eld-e ect transistor (MOSFET), 103, 110 115 bias of, 114 construction of, 110 depletion-mode operation of, 114, 128 enhancement-mode operation of, 114, 128 insulated-gate, 110 load line of, 114 115 SPICE model of, 111 114 symbols for, 110 terminal characteristics of, 110 111 Midfrequency BJT ampli ers, 163 174 Midfrequency range, 163 Miller capacitance, 235 236 n-channel transistor, 103 Negative-impedance converter (NIC), 276 Network(s): lag, 228 lead, 228
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Network(s) (continued) linear, 4 theorems, 4 6 two-port, 8 13 Network phase angle, 227 Noninverting ampli er, 260 Noninverting input operational ampli er, 258 Nonlinear-element stabilization, 139 140 Norton s theorem, 6 Ohm s law, 1 Open-circuit impedance (or z) parameters, 8 Operational ampli ers, 258 267 common-mode rejection ratio in, 260 261 de nition of, 258 di erential, 268 di erentiating, 262 exponential, 278 lter applications in, 264 function generators in, 264 265 ideal, 258 259 integrating, 262 263 inverse log, 278 inverting, 259 260 logarithmic, 263 noninverting, 260 practical, 258 259 signal conditioners in, 264 265 SPICE model of, 265 267 summer, 261 262 unity follower, 269 Output admittance: in common-base (CB) connection, 165 in common-collector (CC) connection, 182 in common-emitter (CE) connection, 164 Output characteristic: of common-base (CB) connection, 71 of common-emitter (CE) connection, 72 of JFET, 103 of vacuum triodes, 116 p-channel transistor, 103 Parameter(s): hybrid (or h), 8 open-circuit impedance (or z), 8 variation analysis of, 141 143 Parameter conversion, 167 168 Passive elements, 1 Passive sign convention, 26 Perveance, 116 Phase shift of signals, 168 Phase-splitter circuit, 222 Piecewise-linear techniques, 38 Pincho , 103 Pincho voltage, 104 Plate characteristic of vacuum triode, 116 Plate resistance, 207
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