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The reverse breakdown voltage VR of the LED of Problem 2.32 is guaranteed by the manufacturer to be no lower than 3 V. Knowing that the 5-V dc source may be inadvertently applied so as to reverse-bias the LED, we wish to add a Zener diode to ensure that reverse breakdown of the LED can never occur. A Zener diode is available with VZ 4:2 V, IZ 30 mA, and a forward drop of 0.6 V. Describe the proper connection of the Zener in the circuit to protect the LED, and nd the value of the luminous intensity that will result if R is unchanged from Problem 2.32.
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The Zener diode and LED should be connected in series to that the anode of one device connects to the cathode of the other. Then, even if the 5-V source is connected in reverse, the reverse voltage across the LED will be less than 5 4:2 0:8 V < 3 V. When the dc source is connected to forward-bias the LED, we will have iD so that VS VFLED VFZ 5 1:6 0:6 20:6 mA 136 R 3 Iv 40iD 40 20:6 10 0:824 mcd
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2.34 A Si diode has a saturation currrent Io 10 nA at T 3008K. (a) Find the forward current iD if the forward drop vD is 0.5 V. (b) This diode is rated for a maximum current of 5 A. What is its junction temperature at rated current if the forward drop is 0.7 V. Ans: a 2:47 A; (b) 405.48K Solve Problem 2.1 for a Si diode. Ans: vD > :0:2372 V
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Laboratory data for a Si diode described by (2.1) show that iD 2 mA when vD 0:6 V, and iD 10 mA for vD 0:7 V. Find (a) the temperature for which the data were taken, and (b) the reverse saturation current. Ans: a 87:198C; b 2:397 A For what voltage vD will the reverse current of a Ge diode that is described by (2.1) reach 99 percent of its saturation value at a temperature of 3008K Ans: vD 0:1191 V Find the increase in temperature T necessary to increase the reverse saturation current of a diode by a factor of 100. Ans: 66:48C
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The diode of Problem 2.34 is operating in a circuit where it has dynamic resistance rd 100 . What must be the quiescent conditions Ans: VDQ 0:263 V; IDQ 0:259 mA The diode of Problem 2.34 has a forward current iD 2 0:004 sin !t mA. Ans: vD 339:5 0:0207 sin !t mV vD VDQ vd , across the diode. Find the total voltage,
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Find the power dissipated in the load resistor RL 100  of the circuit of Fig. 2-22(a) if the diode is ideal and vS 10 sin !t V. Ans: 206:6 mW The logic AND gate of Fig. 2-46(a) has trains of input pulses arriving at the gate inputs, as indicated by Fig. 2-47(b). Signal v2 is erratic, dropping below nominal logic level on occasion. Determine vo . Ans: 10 V for 1 t 2 ms, 5 V for 4 t 5 ms, zero otherwise.
L1, V
+10 V R = 1 k9 D1 + +
t, ms
D2 +
L2, V Lo
t, ms
Fig. 2-46
The logic AND gate of Fig. 2-46(a) is to be used to generate a crude pulse train by letting v1 10 sin !t V and v2 5 V. Determine (a) the amplitude and (b) the period of the pulse train appearing as vo . Ans: a 5 V; b 2=! In the circuit of Fig. 2-29, vS is a 10-V square wave with a 4-ms period. The diode is nonideal, with the characteristic of Fig. 2-26(b). If the capacitor is initially uncharged, determine vC for the rst cycle of vs . Ans: 9:5 1 e 333:3t V for 0 t < 2 ms and 4.62 V for 2 t < 4 ms The forward voltage across the diode of Problem 2.35 is vD 0:3 0:060 cos t V. Find the ac component of the diode current id . Ans: 2:52 cos t mA The circuit of Fig. 2-47(a) is a voltage-doubler circuit, sometimes used as a low-level power supply when the load RL is reasonably constant. It is called a doubler because the steady-state peak value of vL is twice the peak value of the sinusoidal source voltage. Figure 2-47(b) is a sketch of the steady-state output voltage for vs 10 cos !t V. Assume ideal diodes, ! 120 rad/s, C1 20 F, C2 100 F, and RL 20 k. (a) Solve by SPICE methods for the decay time td . (b) From the SPICE results, determine the peak-topeak value of the ripple voltage. (Netlist code available from author website.) Ans: a 15:52 ms; (b) 0.75 V
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