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MOSFET TERMINAL CHARACTERISTICS
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In an n-channel MOSFET, the gate (positive plate), metal oxide lm (dielectric), and substrate (negative plate) form a capacitor, the electric eld of which controls channel resistance. When the positive potential of the gate reaches a threshold voltage VT (typically 2 to 4 V), su cient free electrons
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CHARACTERISTICS OF FIELD-EFFECT TRANSISTORS AND TRIODES
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are attracted to the region immediately beside the metal oxide lm (this is called enhancement-mode operation) to induce a conducting channel of low resistivity. If the source-to-drain voltage is increased, the enhanced channel is depleted of free charge carriers in the area near the drain, and pincho occurs as in the JFET. Typical drain and transfer characteristics are displayed in Fig. 4-8, where VT 4 V is used for illustration. Commonly, the manufacturer speci es VT and a value of pincho current IDon ; the corresponding value of source-to-gate voltage is VGSon .
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iD, mA
LBS = 0
LGS = VGSon
IDon
IDon
6V 5V LGS = VT = 4 V
LDS, V
VT (b)
VGSon
Fig. 4-8
The enhancement-mode MOSFET, operating in the pincho region, is described by (4.1) and (4.2) if Vp0 and IDSS are replaced with VT and IDon , respectively, and if the substrate is shorted to the source, as in Fig. 4-9(a). Then   vGS 2 iD IDon 1 4:6 VT where vGS ! VT . Although the enhancement-mode MOSFET is the more popular (it is widely used in digital switching circuits), a depletion-mode MOSFET, characterized by a lightly doped channel between heavily doped source and drain electrode areas, is commercially available that can be operated like the JFET (see Problem 4.22). However, that device displays a gate-source input impedance several orders of magnitude smaller than that of the JFET.
MOSFET SPICE MODEL
The element speci cation statement for a MOSFET must explicitly assign a model name (an arbitrary selection of alpha and numeric characters) having the general form M n1 n2 n3 n4 model name Nodes n1 ; n2 ; n3 , and n4 belong to the drain, gate, source, and substrate, respectively. Only the nchannel MOSFET is addressed where the device positive voltage and current directions are clari ed by Fig. 4-10.
CHARACTERISTICS OF FIELD-EFFECT TRANSISTORS AND TRIODES
[CHAP. 4
+ VDD iL
iD, MA DC load line Problem 4.20
Drain-feedback bias line
LGS = 8 V
RL RF D CC ii +
AC load line Problem 4.21
,V L gs
6 5 VT = 4
0 4 5 _ 1.7 10 15
LDS, V
Lo, V
t (b)
Fig. 4-9
Fig. 4-10
Format of the .MODEL control statement that must appear in the netlist code for a MOSFET circuit is as follows: .MODEL model name NMOS (parameters) A blank parameter eld results in assignment of default parameter values. Nondefault parameters are entered in the parameter eld as parameter name value. The speci c parameters of concern in this book are documented by Table 4-3. The SPICE model characterizes the enhancement mode MOSFET in the pincho region by iD IDon Kp vGS VT 2 vGS VT 2 2 2 VT
CHAP. 4]
CHARACTERISTICS OF FIELD-EFFECT TRANSISTORS AND TRIODES
Table 4-3 Parameter Vto Kp Rd Rg Description Threshold voltage Transcond. coe . Drain resistance Gate resistance Default 0 2 10 5 0 0 Units V A/V2  
Example 4.4. Use SPICE methods to generate (a) the CS drain characteristics and (b) the transfer characteristic for an n-channel MOSFET that has the parameter values Vto 4 V; Kp 0:0008 A=V2 ; Rd 1 , and Rg 1 k. (a) Figure 4-11(a) shows the chosen connection method for measurement of both the drain characteristics and the transfer characteristic. The netlist code below generates the drain characteristic that has been plotted using the Probe feature of PSpice as Fig. 4-11(b).
Fig. 4-11
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[CHAP. 4
Ex4_4a.CIR - MOSFET drain characteristics vGS 1 0 0V vDS 2 0 0V M 2 1 0 0 NMOSG .MODEL NMOSG NMOS (Vto=4V Kp=0.0008ApVsq + Rd=1ohm Rg=1kohm) .DC vDS 0V 25V 0.5V vGS 0V 8V 1V .PROBE .END
(b) The following netlist code maintains vDS constant to determine the transfer characteristic that is plotted by use of Probe as Fig. 4-11(c).
Ex4_4b.CIR - MOSFET transfer characteristic vGS 1 0 0V vDS 2 0 15V M 2 1 0 0 NMOSG .MODEL NMOSG NMOS (Vto=4V Kp=0.0008ApVsq + Rd=1ohm Rg=1kohm) .DC vGS 0V 8V 0.1V .PROBE .END
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