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In the CB ampli er of Fig. 5-9, VCC 15 V; VEE 5 V; RE 3 k; RC 7 k; and 50. For the Si transistor, ICBO 0:5 A and VBEQ 0:7 V at 258C. (a) Find the exact change in ICQ when the temperature changes to 1258C. (b) Use the stability factors developed in Problem 5.15 to predict ICQ for the same temperature change. Ans: a ICQ 2:042 1:4625 0:5795 mA; b ICQ 0:5769 mA Sensitivity analysis can be extended to handle uncertainties in power-supply voltage. In the circuit of Fig. 3-8(a), let R1 RC 500 , R2 5 k, RE 100 , 75, VBEQ 0:7 V, ICBO 0:2 A; and VCC 20 2 V. (a) Find an expression for the change in ICQ due to changes in VCC alone. (b) Predict the change in ICQ as VCC changes from its minimum to its maximum value. Ans: a ICQ SVCC VCC , where SVCC R1 = R1 R2 = RB 1 RE ; (b) ICQ 3:428 mA In the circuit of Fig. 5-11, R1 RC 500 ; R2 5 k; RE 100 ; 75; and VCC 20 V. Leakage current is negligible. At 258C, VBEQ 0:7 V and VD 0:65 V; however, both change at a rate of 2 mV=8C. (a) Find the exact change in ICQ due to an increase in temperature to 1258C. (b) Use sensitivity-analysis to predict the change in ICQ when the temperature increases to 1258C. Ans: a ICQ 0; b ICQ 0 In Problem 5.24, it was assumed that VGG , and hence VDD , was constant. Suppose now that the powersupply voltage does vary, and nd an expression for IDQ using stability factors. Ans: IDQ % SI IDSS SV Vp0 SVGG VGG , where SVGG @IDQ =@VGSQ 2IDSS =Vp0 1 VGSQ =Vp0 1 RS @IDQ =@VGSQ 1 2RS IDSS =Vp0 1 VGSQ =Vp0
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and SI and SV are given by (7) and (8) of Problem 5.24. 5.44 The MOSFET of Fig. 4-18 is characterized by VT 4 V and ID on 10 mA. The device obeys (4.6). Let iG % 0; R1 0:4 M; R2 5 k; RS 0; RD 2 k; and VDD 20 V. (a) Find the exact change in IDQ when the MOSFET is replaced with a new device characterized by VT 3:8 V and ID on 9 mA. (b) Find the change in IDQ predicted by sensitivity analysis when the original device is replaced as in part a. Ans: a IDQ 2:836 3:402 0:566 mA; b IDQ 0:548 mA The circuit of Fig. 4-18 uses MOSFETs characterized by the device model of Example 4.6 except that VT can vary 10 percent from the nominal value of 4 V among di erent batches of MOSFETs. Use SPICE methods to determine the maximum change of IDQ from the nominal value that can be expected. (Netlist code available at author website.) Ans: IDQ 0:689 mA for VT 3:6 V In the JFET ampli er of Fig. 4-5, VDD 20 V; R1 1 M; R2 15:7 M; RD 3 k; RS 2 k; and iG % 0. The JFET obeys (4.2) and is characterized by IDSS 5 mA and Vp0 5 V. Due to aging, the resistance of R1 increases by 20 percent. (a) Find the exact change in IDQ due to the increase in resistance. (b) Predict the change in IDQ due to the increase in resistance, using sensitivity analysis. Ans: a IDQ 1:735 1:658 0:077 mA; b IDQ SVGG VGG 0:0776 mA For a FET, the temperature dependence of VGSQ is very small when IDQ is held constant. Moreover, for constant VDSQ , the temperature dependency of VGSQ is primarily due to changes in the shorted-gate current; those changes are given by IDSS IDSSO k T 1:1 where IDSSO value of IDSS at 08C T change in temperature from 08C k constant (typically 0:0038C 1 1
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