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Quiz 413
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22-12 Illustration for quiz questions 8, 9, 10, and 11.
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9. In Fig. 22-12, the forward-breakover point for the E-B junction is nearest to: A. No point on this graph. B. B. C. C. D. D. 10. In Fig. 22-12, saturation is nearest to point: A. A. B. B. C. C. D. D. 11. In Fig. 22-12, the greatest gain occurs at point: A. A. B. B. C. C. D. D. 12. In a common-emitter circuit, the gain bandwidth product is: A. The frequency at which the gain is 1. B. The frequency at which the gain is 0.707 times its value at 1 MHz. C. The frequency at which the gain is greatest. D. The difference between the frequency at which the gain is greatest, and the frequency at which the gain is 1.
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414 The bipolar transistor 13. The configuration most often used for matching a high input impedance to a low output impedance puts signal ground at: A. The emitter. B. The base. C. The collector. D. Any point; it doesn t matter. 14. The output is in phase with the input in a: A. Common-emitter circuit. B. Common-base circuit. C. Common-collector circuit. D. More than one of the above. 15. The greatest possible amplification is obtained in: A. A common-emitter circuit. B. A common-base circuit. C. A common-collector circuit. D. More than one of the above. 16. The input is applied to the collector in: A. A common-emitter circuit. B. A common-base circuit. C. A common-collector circuit. D. None of the above. 17. The configuration noted for its stability in radio-frequency power amplifiers is the: A. Common-emitter circuit. B. Common-base circuit. C. Common-collector circuit. D. Emitter-follower circuit. 18. In a common-base circuit, the output is taken from the: A. Emitter. B. Base. C. Collector. D. More than one of the above. 19. The input signal to a transistor amplifier results in saturation during part of the cycle. This produces: A. The greatest possible amplification. B. Reduced efficiency.
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Quiz 415 C. Avalanche effect. D. Nonlinear output impedance. 20. The gain of a transistor in a common-emitter circuit is 100 at a frequency of 1000 Hz. The gain is 70.7 at 335 kHz. The gain drops to 1 at 210 MHz. The alpha cutoff is: A. 1 kHz. B. 335 kHz. C. 210 MHz. D. None of the above.
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CHAPTER
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The field-effect transistor
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BIPOLAR TRANSISTORS BEHAVE AS THEY DO BECAUSE CURRENT VARIATIONS AT one P-N junction produce larger current variations at another. You ve seen a simplified picture of how this happens, and how the effect can be exploited to get current amplification. The bipolar transistor isn t the only way that semiconductors can be combined to get amplification effects. The other major category of transistor, besides the bipolar device, is the field-effect transistor or FET. There are two main types of FET: the junction FET (JFET) and the metal-oxide FET (MOSFET).
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Principle of the JFET
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A JFET can have any of several different forms. They all work the same way: the current varies because of the effects of an electric field within the device. The workings inside a JFET can be likened to the control of water flow through a garden hose. Electrons or holes pass from the source (S) electrode to the drain (D). This results in a drain current, ID , that is generally the same as the source current, IS. This is analogous to the fact that the water comes out of a garden hose at the same rate it goes in (assuming that there aren t any leaks in the hose). The rate of flow of charge carriers that is, the current depends on the voltage at a regulating electrode called the gate (G). Fluctuations in gate voltage, EG, cause changes in the current through the channel, IS or ID. Small fluctuations in the control voltage EG can cause large variations in the flow of charge carriers through the JFET. This translates into voltage amplification in electronic circuits.
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