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N-channel versus P-channel 417
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A simplified drawing of an N-channel JFET, and its schematic symbol, are shown in Fig. 23-1. The N-type material forms the channel, or the path for charge carriers. In the N-channel device, the majority carriers are electrons. The source is at one end of the channel, and the drain is at the other. You can think of electrons as being injected into the source and collected from the drain as they pass through the channel. The drain is positive with respect to the source.
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23-1 Simplified cross-sectional drawing of an N-channel JFET (at A) and its schematic symbol (at B).
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In an N-channel device, the gate consists of P-type material. Another, larger section P-type material, called the substrate, forms a boundary on the side of the channel opposite the gate. The JFET is formed in the substrate during manufacture by a process known as diffusion. The voltage on the gate produces an electric field that interferes with the flow of charge carriers through the channel. The more negative EG becomes, the more the electric field chokes off the current though the channel, and the smaller ID becomes. A P-channel JFET (Fig. 23-2) has a channel of P-type semiconductor. The majority charge carriers are holes. The drain is negative with respect to the source. In a sense, holes are injected into the source and are collected from the drain. The gate and the substrate are of N-type material. In the P-channel JFET, the more positive EG gets, the more the electric field chokes off the current through the channel, and the smaller ID becomes. You can recognize the N-channel device by the arrow pointing inward at the gate, and the P-channel JFET by the arrow pointing outward. Also, you can tell which is which (sometimes arrows are not included in schematic diagrams) by the power-supply polarity. A positive drain indicates an N-channel JFET, and a negative drain indicates a P-channel type.
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418 The field-effect transistor
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23-2 Simplified cross-sectional drawing of a P-channel JFET (at A) and its schematic symbol (at B).
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In electronic circuits, N-channel and P-channel devices can do the same kinds of things. The main difference is the polarity. An N-channel device can almost always be replaced with a P-channel JFET, and the power-supply polarity reversed, and the circuit will still work if the new device has the right specifications. Just as there are different kinds of bipolar transistors, there are various types of JFETs, each suited to a particular application. Some JFETs work well as weak-signal amplifiers and oscillators; others are made for power amplification. Field-effect transistors have some advantages over bipolar devices. Perhaps the most important is that FETs are available that generate less internal noise than bipolar transistors. This makes them excellent for use in sensitive radio receivers at very high or ultra-high frequencies. Field-effect transistors have high input impedances. The gate controls the flow of charge carriers by means of an electric field, rather than via an electric current.
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Either the N-channel or the P-channel JFET works because the voltage at the gate causes an electric field that interferes, more or less, with the flow of charge carriers along the channel. A simplified drawing of the situation for an N-channel device is shown in Fig. 23-3. For a P-channel device, just interchange polarity (minus/plus) and semiconductor types (N/P) in this discussion. As the drain voltage ED increases, so does the drain current ID, up to a certain level-off value. This is true as long as the gate voltage EG is constant, and is not too large negatively. But as EG becomes increasingly negative (Fig. 23-3A), a depletion region (solid black) begins to form in the channel. Charge carriers cannot flow in this region; they must pass through a narrowed channel. The more negative EG becomes, the wider the depletion region gets, as shown at B. Ultimately, if the gate becomes negative enough,
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