barcode in vb.net 2005 Drain current versus drain voltage in Software

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Drain current versus drain voltage
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You might expect that the current ID, passing through the channel of a JFET, would increase linearly with increasing drain voltage ED. But this is not, in general, what happens. Instead, the current ID rises for awhile, and then starts to level off. The drain current ID (which is the same as the channel current) is often plotted as a function of drain voltage, ED, for various values of gate voltage, EG. The resulting set of
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422 The field-effect transistor curves is called a family of characteristic curves for the device. The graph of Fig. 23-6 shows a family of characteristic curves for a hypothetical N-channel JFET. Engineers make use of these graphs when deciding on the best JFET type for an electronic circuit. Also of importance is the curve of ID vs EG, one example of which is shown in Fig. 23-5.
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23-6 A family of characteristic curves for a hypothetical N-channel JFET.
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Transconductance
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Recall the discussion of dynamic current amplification from the last chapter. This is a measure of how well a bipolar transistor amplifies a signal. The JFET analog of this is called dynamic mutual conductance or transconductance. Refer again to Fig. 23-5. Suppose that EG is a certain value, with a corresponding ID resulting. If the gate voltage changes by a small amount dEG then the drain current will also change by a certain increment dID. The transconductance is the ratio dID/dEG. Geometrically, this translates to the slope of a line tangent to the curve of Fig. 23-5. The value of dID/dEG is obviously not the same everywhere along the curve. When the JFET is biased beyond pinchoff, in the region marked Y in the figure, the slope of the curve is zero. There is no drain current, even if the gate voltage changes. Only when the channel is conducting will there be a change in ID when there is a change in EG. The region where the transconductance, dID/dEG, is the greatest is the region marked X, where the slope of the curve is steepest. This is where the most gain can be obtained from the JFET.
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The MOSFET
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The acronym MOSFET (pronounced moss-fet ) stands for metal-oxide-semiconductor field-effect transistor. A simplified cross-sectional drawing of an N-channel MOSFET, along with the schematic symbol, is shown in Fig. 23-7. The P-channel device is shown in
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The MOSFET 423 the drawings of Fig. 23-8. The N-channel device is diffused into a substrate of P-type semiconductor material. The P-channel device is diffused into a substrate of N-type material.
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23-7 At A, simplified cross-sectional drawing of an N-channel MOSFET. At B, the schematic symbol.
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23-8 At A, simplified cross-sectional drawing of a P-channel MOSFET. At B, the schematic symbol.
Super-high input impedance
When the MOSFET was first developed, it was called an insulated-gate FET or IGFET. This is perhaps more descriptive of the device than the currently accepted name. The gate electrode is actually insulated, by a thin layer of dielectric, from the channel. As a
424 The field-effect transistor result, the input impedance is even higher than that of a JFET; the gate-to-source resistance of a typical MOSFET is comparable to that of a capacitor! This means that a MOSFET draws essentially no current, and therefore no power, from the signal source. Some MOSFETs have input resistance exceeding a trillion (1012) ohms.
The main problem
The trouble with MOSFETs is that they can be easily damaged by static electric discharges. When building or servicing circuits containing MOS devices, technicians must use special equipment to ensure that their hands don t carry static charges that might ruin the components. If a static discharge occurs through the dielectric of a MOS device, the component will be destroyed permanently. Warm and humid climates do not offer protection against the hazard. (This author s touch has dispatched several MOSFETs in Miami during the summer.)
Flexibility
In actual circuits, an N-channel JFET can sometimes be replaced directly with an N-channel MOSFET; P-channel devices can be similarly interchanged. But the characteristic curves for MOSFETs are not the same as those for JFETs. The main difference is that the SG junction in a MOSFET is not a P-N junction. Therefore, forward breakover cannot occur. An EG of more than 0.6 V can be applied to an N-channel MOSFET, or an EG more negative than 0.6 V to a P-channel device, without a current leak taking place. A family of characteristic curves for a hypothetical N-channel MOSFET is shown in the graph of Fig. 23-9. The device will work with positive gate bias as well as with negative gate bias. A P-channel MOSFET behaves in a similar way, being usable with either positive or negative EG.
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