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The P-N Junction 319
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a semiconductor diode.
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In the diode as shown in Figure 19-3, electrons can move easily in the direction opposite the arrow, and holes can move easily in the direction in which the arrow points. But current cannot, under most conditions, flow the other way. Electrons normally do not move with the arrow, and holes normally do not move against the arrow. If you connect a battery and a resistor in series with the diode, you ll get a current to flow if the negative terminal of the battery is connected to the cathode and the positive terminal is connected to the anode, as shown in Fig. 19-4A. No current will flow if the battery is reversed, as shown in Fig. 19-4B. (The resistor is included in the circuit to prevent destruction of the diode by excessive current.) It takes a specific, well-defined minimum applied voltage for conduction to occur through a semiconductor diode. This is called the forward breakover voltage. Depending on the type of material, the forward breakover voltage varies from about 0.3 V to 1 V. If the voltage across the junction is not at least as great as the forward breakover voltage, the diode will not conduct, even when it is connected as shown in Fig. 19-4A. This effect, known as the forward breakover effect or the P-N junction threshold effect, can be of use in circuits designed to limit the positive and/or negative peak voltages that signals can attain. The effect can also be used in a device called a threshold detector, in which a signal must be stronger than a certain amplitude in order to pass through.
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battery, a resistor, a current meter, and a diode. At A, forward bias results in a flow of current. At B, reverse bias results in no current.
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How the Junction Works When the N-type material is negative with respect to the P type, as in Fig. 19-4A, electrons flow easily from N to P. The N-type semiconductor, which already has an excess of electrons, receives more; the P-type semiconductor, with a shortage of electrons, has some more taken away. The N-type material constantly feeds electrons to the P type in an attempt to create an electron balance, and the battery or power supply keeps robbing electrons from the P-type material. This condition is illustrated in Fig. 19-5A, and is known as forward bias. Current can flow through the diode easily under these circumstances. When the battery or dc power-supply polarity is switched so the N-type material is positive with respect to the P type, the situation is called reverse bias. Electrons in the N-type material are pulled toward the positive charge pole, away from the P-N junction. In the P-type material, holes are pulled toward the negative charge pole, also away from the P-N junction. The electrons are the majority carriers in the N-type material, and the holes are the majority carriers in the P-type material. The charge therefore becomes depleted in the vicinity of the P-N junction, and on both sides of it, as shown in Fig. 19-5B. This zone, where majority carriers are deficient, is called the depletion region. A shortage of majority carriers in any semiconductor substance means that the substance cannot conduct well. Thus, the depletion region acts like an electrical insulator. This is why a semiconductor diode will not normally conduct when it is reverse-biased. A diode is, in effect, a one-way current gate usually! Junction Capacitance Some P-N junctions can alternate between conduction (in forward bias) and nonconduction (in reverse bias) millions or billions of times per second. Other junctions are slower. The main limiting
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