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Quiz Questions 8 through 11.
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11. In Fig. 22-12, the greatest gain occurs at (a) point A. (b) point B. (c) point C. (d) point D. 12. In a common emitter circuit, the gain bandwidth product is (a) the frequency at which the gain is 1. (b) the frequency at which the gain is 0.707 times its value at 1 MHz. (c) the frequency at which the gain is greatest. (d) the difference between the frequency at which the gain is greatest, and the frequency at which the gain is 1. 13. The bipolar-transistor configuration most often used for matching a high input impedance to a low output impedance puts signal ground at (a) the emitter. (b) the base. (c) the collector. (d) any point; it doesn t matter. 14. The output is in phase with the input in (a) a common emitter circuit. (b) a common base circuit. (c) a common collector circuit. (d) more than one of the above. 15. The greatest possible amplification is obtained in (a) a common emitter circuit. (b) a common base circuit. (c) a common collector circuit. (d) more than one of the above. 16. The input is applied to the collector in (a) a common emitter circuit. (b) a common base circuit. (c) a common collector circuit. (d) none of the above. 17. The configuration noted for its stability in RF power amplifiers is the (a) common emitter circuit. (b) common base circuit. (c) common collector circuit. (d) emitter follower circuit.
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18. In a common base circuit, the output is taken from (a) the emitter. (b) the base. (c) the collector. (d) more than one of the above. 19. Suppose that the input signal to a transistor amplifier results in saturation during part of the cycle. This produces (a) the greatest possible amplification. (b) reduced efficiency. (c) avalanche effect. (d) nonlinear output impedance. 20. Suppose that the gain of a transistor in a common emitter circuit is 100 at a frequency of 1 kHz, and the gain is 70.7 at 335 kHz. The gain drops to 1 at 210 MHz. The alpha cutoff frequency is (a) 1 kHz. (b) 335 kHz. (c) 210 MHz. (d) impossible to define based on this data.
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The Field Effect Transistor
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THE BIPOLAR TRANSISTOR ISN T THE ONLY SEMICONDUCTOR TRANSISTOR THAT CAN AMPLIFY. THE
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other major category of transistor is the field effect transistor (FET ). There are two main types of FET: the junction FET (JFET ) and the metal-oxide FET (MOSFET ).
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Principle of the JFET
In a JFET, the current varies because of the effects of an electric field within the device. Charge carriers (electrons or holes) flow from the source (S) electrode to the drain (D) electrode. This results in a drain current, ID, that is normally the same as the source current, IS. The rate of flow of charge carriers that is, the current depends on the voltage at a control electrode called the gate (G). Fluctuations in gate voltage, EG, cause changes in the current through the channel, which is the path between the source and the drain. The current through the channel is normally equal to ID. Small fluctuations in EG can cause large variations in ID. This fluctuating drain current can produce significant fluctuations in the voltage across an output resistance.
N-Channel versus P-Channel A simplified drawing of an N-channel JFET, and its schematic symbol, are shown in Fig. 23-1. The N-type material forms the channel, or the path for charge carriers. The majority carriers are electrons. The drain is placed at a positive dc voltage with respect to the source. In an N-channel device, the gate consists of P-type material. Another section of P-type material, called the substrate, forms a boundary on the side of the channel opposite the gate. The voltage on the gate produces an electric field that interferes with the flow of charge carriers through the channel. The more negative EG becomes, the more the electric field chokes off the current through the channel, and the smaller ID becomes. A P-channel JFET (Fig. 23-2) has a channel of P-type semiconductor. The majority charge carriers are holes. The drain is negative with respect to the source. The more positive EG gets, the more the electric field chokes off the current through the channel, and the smaller ID becomes.
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