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366 The Field Effect Transistor
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23-1 At A, pictorial diagram
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of an N-channel JFET. At B, the schematic symbol. Electrodes are S = source, G = gate, and D = drain.
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You can recognize the N-channel JFET in schematic diagrams by the arrow pointing inward at the gate, and the P-channel JFET by the arrow pointing outward. Also, you can tell which is which (sometimes arrows are not included in schematic diagrams) by the power-supply polarity. A positive drain indicates an N-channel JFET, and a negative drain indicates a P-channel JFET. In electronic circuits, N-channel and P-channel devices can do the same kinds of things. The main difference is the polarity. An N-channel device can almost always be replaced with a P-channel JFET, and the power-supply polarity reversed, and the circuit will still work if the new device has the right specifications. Just as there are different kinds of bipolar transistors, there are various types of JFETs, each suited to a particular application. Some JFETs work well as weak-signal amplifiers and oscillators; others are made for power amplification. Field effect transistors have certain advantages over bipolar transistors. Perhaps the most important is that FETs are available that generate less internal noise than bipolar transistors. This makes them excellent for use as weak-signal amplifiers at very high or ultrahigh frequencies. Field effect transistors have high input impedance, which can also be an advantage in weak-signal amplifiers.
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23-2 At A, pictorial diagram
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of a P-channel JFET. At B, the schematic symbol. Electrodes are S = source, G = gate, and D = drain.
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Principle of the JFET 367
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23-3 At A, the depletion region (darkest area) is narrow, the
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channel (white area) is wide, and many charge carriers (heavy dashed line) flow. At B, the depletion region is wider, the channel is narrower, and fewer charge carriers flow. At C, the depletion region obstructs the channel, and no charge carriers flow.
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Depletion and Pinchoff The JFET works because the voltage at the gate causes an electric field that interferes, more or less, with the flow of charge carriers along the channel. A simplified drawing of the situation for an N-channel device is shown in Fig. 23-3. As the drain voltage ED increases, so does the drain current ID, up to a certain level-off value. This is true as long as the gate voltage EG is constant, and is not too large negatively. But as EG becomes increasingly negative (Fig. 23-3A), a depletion region (shown as a solid dark area) begins to form in the channel. Charge carriers cannot flow in this region; they must pass through a narrowed channel. The more negative EG becomes, the wider the depletion region gets, as shown in drawing B. Ultimately, if the gate becomes negative enough, the depletion region completely obstructs the flow of charge carriers. This condition is called pinchoff, and is illustrated at C. JFET Biasing Two biasing methods for N-channel JFET circuits are shown in Fig. 23-4. In Fig. 23-4A, the gate is grounded through resistor R2. The source resistor, R1, limits the current through the JFET. The drain current, ID, flows through R3, producing a voltage across this resistor. The ac output signal passes through C 2. In Fig. 23-4B, the gate is connected through potentiometer R2 to a voltage that is negative with respect to ground. Adjusting this potentiometer results in a variable negative EG between R2 and R3. Resistor R1 limits the current through the JFET. The drain current, ID, flows through R4, producing a voltage across it. The ac output signal passes through C 2. In both of these circuits, the drain is positive relative to ground. For a P-channel JFET, reverse the polarities in Fig. 23-4. Typical power-supply voltages in JFET circuits are comparable to those for bipolar transistor circuits. The voltage between the source and drain, abbreviated ED, can range from about 3 V to 150 V dc; most often it is 6 to 12 V dc. The biasing arrangement in Fig. 23-4A is preferred for weak-signal amplifiers, low-level amplifiers, and oscillators. The scheme at B is more often employed in power amplifiers having substantial input signal amplitudes.
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