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vb.net barcode reader source code Transistor Fundamentals in Software
9 QR Code Scanner In None Using Barcode Control SDK for Software Control to generate, create, read, scan barcode image in Software applications. Denso QR Bar Code Printer In None Using Barcode generation for Software Control to generate, create Denso QR Bar Code image in Software applications. Transistor Fundamentals
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Encoding UPCA In None Using Barcode printer for Software Control to generate, create UPC Code image in Software applications. Code 39 Full ASCII Creator In None Using Barcode generation for Software Control to generate, create Code 39 image in Software applications. voltage There is an obvious analogy between the MOSFET drain characteristic and the BJT collector characteristic, but we also note the important differences: In the BJT collector curves, the family of curves is indexed as a function of base current, while the drain characteristic is a function of gate voltage Thus, we can think of the BJT as a currentcontrolled device, while the MOSFET is intrinsically a voltagecontrolled device Note also that to completely describe the behavior of a BJT we needed to also de ne a separate base junction curve in terms of the base current variation versus the baseemitter voltage, while MOSFETs do not require an additional gate characteristic curve, because the gate is insulated and no gate current ows Finally, we observe that if the drainsource voltage is increased above a breakdown value, VB , the drain current rapidly increases, eventually leading to device destruction by thermally induced damage This condition de nes the last region of operation of the MOSFET, namely, the breakdown region The four regions of operation are summarized in Table 91 The equations describing the ohmic and saturation regions are also given in the table Note that in these equations we have introduced another important MOSFET physical parameter, IDSS It is also important to note that the equations describing MOSFET operation are nonlinear ANSI/AIM I2/5 Creator In None Using Barcode drawer for Software Control to generate, create ANSI/AIM I2/5 image in Software applications. Painting Barcode In VS .NET Using Barcode maker for Reporting Service Control to generate, create bar code image in Reporting Service applications. Table 91 Regions of operation and equations of nchannel enhancement MOSFET Cutoff region: vGS < VT Ohmic or triode region: vDS < 025(vGS VT ), vGS > VT 2 VT (equivalent draintosource resistance) RDS = 2IDSS (VGS VT ) vDS iD RDS Saturation region: vDS vGS VT , vGS > VT IDSS (vGS VT )2 = k (vGS VT )2 2 VT Breakdown region: vDS > VB iD = Scan Bar Code In Visual C#.NET Using Barcode scanner for .NET Control to read, scan read, scan image in .NET framework applications. UPC A Printer In ObjectiveC Using Barcode generator for iPhone Control to generate, create GS1  12 image in iPhone applications. Part II
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Generate Bar Code In VS .NET Using Barcode drawer for VS .NET Control to generate, create bar code image in .NET framework applications. Code39 Maker In Visual Studio .NET Using Barcode generator for ASP.NET Control to generate, create Code 3 of 9 image in ASP.NET applications. Examples 98 to 910 illustrate the use of the MOSFET drain curves of Figure 931(b) in establishing the Qpoint of a MOSFET ampli er EXAMPLE 98 MOSFET QPoint Graphical Determination
Problem
Determine the Q point for the MOSFET in the circuit of Figure 932
iD (mA) 100 vGS = 28 V
26 V 60 52 40 24 V 22 V G 20 V + VGG vGS D iD + vDS S RD
18 V 16 V 14 V 10 vDS (V) Figure 932 nchannel enhancement MOSFET circuit and drain characteristic for Example 98
Solution
Known Quantities: MOSFET drain resistance; drain and gate supply voltages; MOSFET
drain curves
Find: MOSFET quiescent drain current, iDQ , and quiescent drainsource voltage, vDSQ
RD = 100
Schematics, Diagrams, Circuits, and Given Data: VGG = 24 V; VDD = 10 V; Assumptions: Use the drain curves of Figure 932 Analysis: To determine the Q point we write the drain circuit equation, applying KVL: VDD = RD iD + vDS 10 = 100iD + vDS The resulting curve is plotted as a dashed line on the drain curves of Figure 932 by noting that the drain current axis intercept is equal to VDD /RD = 100 mA and that the drainsource voltage axis intercept is equal to VDD = 10 V The Q point is then given by the intersection of the load line with the VGG = 24 V curve Thus, iDQ = 52 mA and vDSQ = 475 V 9
Transistor Fundamentals
Comments: Note that the Q point determination for a MOSFET is easier than for a BJT, since there is no need to consider the gate circuit, because gate current ow is essentially zero In the case of the BJT, we also needed to consider the base circuit EXAMPLE 99 MOSFET QPoint Calculation
Problem
Determine the Q point for the MOSFET in the circuit of Figure 932
Solution
Known Quantities: MOSFET drain resistance; drain and gate supply voltages; MOSFET
universal equations
Find: MOSFET quiescent drain current, iDQ , and quiescent drainsource voltage, vDSQ
RD = 100
Schematics, Diagrams, Circuits, and Given Data: VGG = 24 V; VDD = 10 V; Assumptions: Use the MOSFET universal equations of Table 91 Analysis: We determine the threshold voltage by observing (in the curves of Figure 932) that the smallest gate voltage for which the drain current is nonzero is 14 V Thus, VT = 14 V From the same curves, the drain current corresponding to 2VT is approximately 95 mA Thus IDSS = 95 mA Knowing these two parameters and the gate voltage, we apply the appropriate equation in Table 91 Since vGS = vGG > VT , we write: iDQ = IDSS and vDSQ = VDD RD iDQ = 10 100 485 10 3 = 515 V

