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VCC IB(Q) IC(Q) V(1,4) V(3,4)
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1.500E+01 1.428E-05 2.575E-03 6.748E-01 7.252E+00
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where IBQ IB Q ; ICQ IC Q ; VBEQ V 1; 4 , and VCEQ V 3; 4 . Example 3.8. The signal source switch of Fig. 3-9(a) is closed, and the transistor base current becomes iB IBQ ib 40 20 sin !t A
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The collector characteristics of the transistor are those displayed in Fig. 3-9(b). If VCC 12 V and Rdc 1 k, graphically determine (a) ICQ and VCEQ , (b) ic and vce , and (c) hFE at the Q point. (a) The dc load line has ordinate intercept VCC =Rdc 12 mA and abscissa intercept VCC 12 V and is constructed on Fig. 3-9(b). The Q point is the intersection of the load line with the characteristic curve iB IBQ 40 A. The collector quiescent quantities may be read from the axes as ICQ 4:9 mA and VCEQ 7:2 V. (b) A time scale is constructed perpendicular to the load line at the Q point, and a scaled sketch of ib 20 sin !t A is drawn [see Fig. 3-9(b)] and translated through the load line to sketches of ic and vce . As ib swings 20 A along the load line from points a to b, the ac components of collector current and voltage take on the values ic 2:25 sin !t (c) mA and vce 2:37 sin !t V
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The negative sign on vce signi es a 1808 phase shift. From (3.2) with ICEO 0 [the iB 0 curve coincides with the vCE axis in Fig. 3-9(b)], hFE ICQ 4:9 10 3 122:5 IBQ 40 10 6
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It is clear that ampli ers can be biased for operation at any point along the dc load line. Table 3-4 shows the various classes of ampli ers, based on the percentage of the signal cycle over which they operate in the linear or active region.
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Table 3-4 Class A AB B C Percentage of Active-Region Signal Excursion 100 between 50 and 100 50 less than 50
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CHARACTERISTICS OF BIPOLAR JUNCTION TRANSISTORS
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CAPACITORS AND AC LOAD LINES
Two common uses of capacitors (sized to appear as short circuits to signal frequencies) are illustrated by the circuit of Fig. 3-10(a).
6 + VCC
RC R2 4 2 Ri 1
CC iL
7 ic iL
ii +
+ Ri + R1R2 = RB R1 + R2 RC _ ie RL
LL _
5 R1 RE CE
LL _ Li
_ 0 Zin Z in (a) Zo
Fig. 3-10
1. 2.
Coupling capacitors (CC con ne dc quantities to the transistor and its bias circuitry. Bypass capacitors CE e ectively remove the gain-reducing emitter resistor RE insofar as ac signals are concerned, while allowing RE to play its role in establishing -independent bias (Section 3.6).
The capacitors of Fig. 3-10(a) are shorted in the circuit as it appears to ac signals [Fig. 3-10(b)]. In Fig. 3-10(a), we note that the collector-circuit resistance seen by the dc bias current ICQ % IEQ is Rdc RC RE . However, from Fig. 3-10(b) it is apparent that the collector signal current ic sees a collector-circuit resistance Rac RC RL = RC RL . Since Rac 6 Rdc in general, the concept of an ac load line arises. By application of KVL to Fig. 3-10(b), the v-i characteristic of the external signal circuitry is found to be vce ic Rac Since ic iC ICQ and vce vCE VCEQ , (3.11) can be written analogously to (3.9) as iC vCE VCEQ ICQ Rac Rac 3:12 3:11
All excursions of the ac signals ic and vce are represented by points on the ac load line, (3.12). If the value iC ICQ is substituted into (3.12), we nd that vCE VCEQ ; thus, the ac load line intersects the dc load line at the Q point.
Example 3.9. Find the points at which the ac load line intersects the axes of the collector characteristic. The iC intercept iC max is found by setting vCE 0 in (3.12): iC max The vCE intercept is found by setting iC 0 in (3.12): vCE max VCEQ ICQ Rac 3:14 VCEQ ICQ Rac 3:13
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