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CHARACTERISTICS OF BIPOLAR JUNCTION TRANSISTORS
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iC, mA DC load line AC load line
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iC max = 9.67 VCC = 7.5 Rdc ICQ = 0.96
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VCC = 15
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LCE, V LCE max = 14.51
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Fig. 3-25
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In the common-collector (CC) or emitter-follower (EF) ampli er of Fig. 3-26(a), VCC 12 V; RE 1 k; RL 3 k, and CC ! 1. The Si transistor is biased so that VCEQ 5:7 V and has the collector characteristic of Fig. 3-26(b). (a) Construct the dc load line. (b) Find the value of . (c) Determine the value of RB .
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(a) The dc load line must intercept the vCE axis at VCC 12 V. It intercepts the iC axis at
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VCC VCC 12 12 mA Rdc RE 1 103 The intercepts are connected to form the dc load line shown on Fig. 3-26(b). (b) IBQ is determined by entering Fig. 3-26(b) at VCEQ 5:7 V and interpolating between iB curves to nd IBQ % 50 A. ICQ is then read as % 6:3 mA. Thus, (c) By KVL, VCC VBEQ 1 ICQ RE 12 0:7 126 1 6 10 3 1 103 126 105:05 k 50 10 6 ICQ 6:3 10 3 126 IBQ 50 10 6
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RB
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The ampli er of Fig. 3-27 uses an Si transistor for which VBEQ 0:7 V. Assuming that the collector-emitter bias does not limit voltage excursion, classify the ampli er according to Table 3-4 if (a) VB 1:0 V and vS 0:25 cos !t V; b VB 1:0 V and vS 0:5 cos !t V, (c) VB 0:5 V and vS 0:6 cos !t V, (d) VB 0:7 V and vS 0:5 cos !t V.
As long as vS VB > 0:7 V, the emitter-base junction is forward-biased; thus classi cation becomes a matter of determining the portion of the period of vS over which the above inequality holds. (a) vS VB ! 0:75 V through the complete cycle; thus the transistor is always in the active region, and the ampli er is of class A. (b) 0:5 vS VB 1:5 V; thus the transistor is cut o for a portion of the negative excursion vS . Since cuto occurs during less than 1808, the ampli er is of class AB. (c) 0:1 vS VB 1:1 V, which gives conduction for less than 1808 of the period of vS , for class C operation. (d) vS VB ! 0:7 V over exactly 1808 of the period of vS , for class B operation.
+ VCC
+ CC iS
LB _
CC RE + LE _ RL iL + LL _
Zin (a) iC, mA DC load line (Problem 3.32) AC load line (Problem 3.54)
100 mA 80 mA 60 mA Q
40 mA
20 mA
0 0 2 4 6 4.7 5.7 6.7 8 10 12 14
iB = 10 mA iB = 0
16 18
LCE, V
LCE, V
Fig. 3-26
+ _ _ + 1 VCC
Fig. 3-27
CHAP. 3]
CHARACTERISTICS OF BIPOLAR JUNCTION TRANSISTORS
Supplementary Problems
3.34 3.35 3.36 The leakage currents of a transistor are ICBO 5 A and ICEO 0:4 mA, and IB 30 A. Determine the value of IC . Ans. 277 mA For a BJT, IC 5:2 mA, IB 50 A, and ICBO 0:5 A. (a) Find and IEQ . (b) What is the percentage error in the calculation of if the leakage current is assumed zero Ans. (a) 102.96, 5.25 mA; (b) 1.01% Collector-to-base leakage current can be modeled by a current source as in Fig. 3-28, with the understanding 0 0 0 0 0 that transistor action relates currents IC , IB , and IE IC IE , and IC IB . Prove that a IC IB 1 ICBO b IB IE ICBO 1 c IE 1 IC ICBO
IC ICBO C IC B IB IB IE
Fig. 3-28
If the transistor of Problem 3.4 were replaced by a new transistor with 1 percent greater , what would be the percentage change in emitter current Ans. a 96.07% increase In the circuit of Fig. 3-11, VCEsat 0:2 V; 0:99; IBQ 20 A; VCC 15 V, and RC 15 k. What is the value of VCEQ Ans: VCEQ VCEsat 0:2 V In many switching applications, the transistor may be utilized without a heat sink, since PC % 0 in cuto and PC is small in saturation. Support this statement by calculating the collector power dissipated in (a) Problem 3.6 (active-region bias) and (b) Problem 3.38 (saturation-region bias). Ans. (a) 18 mW; (b) 0.39 mW The collector characteristics of the transistor of Fig. 3-11 are given in Fig. 3-9(b). If IBQ 40 A; VCC 15 V, and RC 2:2 k, specify the minimum power rating of the transistor to ensure there is no danger of thermal damage. Ans: 22:54 mW In the circuit of Fig. 3-13, VCC 20 V; RC 5 k; RE 4 k, and RB 500 k. ICBO 0 and 50. Find ICQ and VCEQ . Ans: 1:91 mA, 2.64 V The Si transistor has
The transistor of Problem 3.41 failed and was replaced with a new transistor with ICBO 0 and 75. Is the transistor still biased for active-region operation Ans. Since the calculated VCEQ 6:0 V < 0, the transistor is not in the active region. What value of RB will result in saturation of the Si transistor of Fig. 3-13 if VCC 20 V, RE 4 k; 50, and VCEsat 0:2 V Ans: RB 442:56 k RC 5 k,
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