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IPQ VGG
LG, V
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L P, V
_V /R GG G
(a) Grid characteristics
(b) Plate characteristics
Fig. 4-13
The triode input characteristics of Fig. 4-13(a) show that operation with a positive grid voltage results in ow of grid current; however, with a negative grid voltage (the common application), negligible grid current ows and the plate characteristics are reasonably approximated by a three-halves-power relationship involving a linear combination of plate and grid voltages: iP  vP vG 3=2 4:9
where  denotes the perveance (a constant that depends upon the mechanical design of the tube) and  is the ampli cation factor, a constant whose signi cance is elucidated in 7 when small-signal ampli cation of the triode is addressed. To establish a range of triode operation favorable to the signal to be ampli ed, a quiescent point must be determined by dc bias circuitry. The basic triode ampli er of Fig. 4-14 has a grid power supply VGG of such polarity as to maintain vG negative (the more common mode of operation). With no input signal vS 0 , application of KVL around the grid loop of Fig. 4-14 yields the equation of the grid bias line, iG VGG vG RG RG 4:10
which can be solved simultaneously with (4.7) or plotted as indicated on Fig. 4-13(a) to determine the quiescent values IGQ and VGQ . If VGG is of the polarity indicated in Fig. 4-14, the grid is negatively biased, giving the Q point labeled Qn . At that point, IGQ % 0 and VGQ % VGG ; these approximate solutions su ce in the case of negative grid bias. However, if the polarity of VGG were reversed, the grid would have a positive bias, and the quiescent point Qp would give IGQ > 0 and VGQ < VGG .
CHAP. 4]
CHARACTERISTICS OF FIELD-EFFECT TRANSISTORS AND TRIODES
P + RG +
iP +
iG RL
_ _ + VGG
_ K _ + VPP
Fig. 4-14 Basic triode ampli er
Voltage summation around the plate circuit of Fig. 4-14 leads to the equation of the dc load line iP VPP vP RL RL 4:11
which, when plotted on the plate characteristics of Fig. 4-13(b), yields the quiescent values VPQ and IPQ at its intersection with the curve vG VGQ .
Example 4.7. In the triode ampli er of Fig. 4-14, VGG 4 V, VPP 300 V, RL 10 k, and RG 2 k. The plate characteristics for the triode are given by Fig. 4-13(b). (a) Draw the dc load line; then determine the quiescent values (b) IGQ ; c VGQ ; d IPQ , and e VPQ . (a) For the given values, the dc load line (4.11) has the iP intercept VPP 300 30 mA RL 10 103 and the vP intercept VPP 300 V. characteristics of Fig. 4-13(b). (c) (e) These intercepts have been utilized to draw the dc load line on the plate
(b) Since the polarity of VGG is such that vG is negative, negligible grid current will ow IGQ % 0 . For negligible grid current, (4.10) evaluated at the Q point yields VGQ VGG 4 V. Projection of Qn onto the vP axis of Fig. 4-13(b) gives VPQ 220 V. (d) The quiescent plate current is read as the projection of Qn onto the iP axis of Fig. 4-13(b) and is IPQ 8 mA.
Solved Problems
4.1 If CS 0 and all else is unchanged in Example 4.2, nd the extremes between which vS swings.
Voltage vgs will swing along the dc load line of Fig 4-6(b) (which is now identical to the ac load line) from point a to point b, giving, as extremes of iD , 3.1 mA and 0.4 mA. The corresponding extremes of vS iD RS are 6.2 V and 0.8 V.
For the MOSFET ampli er of Example 4.5, let VGSQ 6:90 V. Calculate IDQ from the analog of (4.2) developed in Section 4.8.
From the drain characteristics of Fig. 4-9(b), we see that VT 4 V and that IDon 5 mA at VGSon 8 V. Thus,
CHARACTERISTICS OF FIELD-EFFECT TRANSISTORS AND TRIODES     VGSQ 2 6:90 2 IDQ IDon 1 5 10 3 1 2:63 mA 4 VT (Compare Example 4.5.)
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