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CHARACTERISTICS OF FIELD-EFFECT TRANSISTORS AND TRIODES
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Maximum Nominal Problem 4.8 RS = 750 9 Minimum Qmax Qnom Qmin
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The drain resistor value is found by applying KVL around the drain-source loop and solving for RD : RD VDD VDSQ IDQ RS 24 15 0:002 750 3:75 k 0:002 IDQ
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When RS and RD have these values, the condition on IDQ is satis ed.
An n-channel JFET has worst-case shorted-gate parameters given by the manufacturer as follows:
Value maximum minimum IDSS ; mA 8 4 Vp0 , V 6 3
If the JFET is used in the circuit of Fig. 4-5(b), where RS 0; RG 1 M; RD 2:2 k, VGG 1 V, and VDD 15 V, use SPICE methods to nd the maximum and minimum values of IDQ and the maximum and minimum values of VDSQ that could be expected. Model the JFET by default parameters except for Vto and Beta.
The netlist code below describes the circuit.
Prb4_9.CIR - Worst-case study .PARAM Vpo=-3V, Ion=8mA RG 1 5 1MEGohm VGG 5 0 -1V RD 3 4 2.2kohm VDD 4 0 15V J 3 1 0 NJFET ; RS not used .MODEL NJFET NJF( Vto={Vpo} Beta={Ion/Vpo^2} ) .DC PARAM Vpo -3V -6V 3V PARAM Ion 4mA 8mA 4mA .PRINT DC ID(J) V(3) .END
CHAP. 4]
CHARACTERISTICS OF FIELD-EFFECT TRANSISTORS AND TRIODES
Execute hPrb4_9.CIRi and examine the output le to nd the two pairs of values IDQ min 1:78 mA; IDQ max 5:15 mA; VDSQ max 11:09 V VDSQ min 3:66 V
Gate current is negligible for the p-channel JFET of Fig. 4-17. If VDD 20 V; IDSS 10 mA, IDQ 8 mA; Vp0 4 V; RS 0, and RD 1:5 k, nd (a) VGG and (b) VDSQ .
VDD RD +
CC +
CC IGQ RG + _ VGG
Fig. 4-17
(a) Solving (4.2) for vGS and substituting Q-point conditions yield " VGSQ Vp0 IDQ IDSS 1=2 " #  8 1=2 1 4 1 0:422 V 10 #
With negligible gate current, KVL requires that VGG VGSQ 0:422 V. (b) Applying KVL around the drain-source loop gives VDSQ VDD IDQ RD 20 8 10 3 1:5 103 8 V
The n-channel enhancement-mode MOSFET of Fig. 4-18 is characterized by VT 4 V and IDon 10 mA. Assume negligible gate current, R1 50 k; R2 0:4 M; RS 0; RD 2 k, and VDD 15 V. Find (a) VGSQ ; b IDQ , and (c) VDSQ .
(a) With negligible gate current, (4.3) leads to VGSQ VGG (b) By (4.6),     VGSQ 2 1:67 2 IDQ IDon 1 10 10 3 1 3:39 mA 4 VT (c) By KVL around the drain-source loop, VDSQ VDD IDQ RD 15 3:39 10 3 2 103 8:22 V R2 50 103 V 15 1:67 V R2 R1 DD 50 103 0:4 106
CHARACTERISTICS OF FIELD-EFFECT TRANSISTORS AND TRIODES
[CHAP. 4
R1 RS
Fig. 4-18
For the n-channel enhancement-mode MOSFET of Fig. 4-18, gate current is negligible, IDon 10 mA, and VT 4 V. If RS 0; R1 50 k; VDD 15 V; VGSQ 3 V, and VDSQ 9 V, determine the values of (a) R1 and (b) RD .
(a) Since iG 0; VGSQ VGG of (4.3).  R2 R1 (b) By (4.6),     VGSQ 2 3 2 IDQ IDon 1 10 10 3 1 0:625 mA 4 VT Then KVL around the drain-source loop requires that RD VDD VDSQ 15 9 9:6 k IDQ 0:625 10 3 Solving for R2 gives    VDD 15 1 200 k 1 50 103 3 VGSQ
A p-channel MOSFET operating in the enhancement mode is characterized by VT 3 V and IDQ 8 mA when VGSQ 4:5 V. Find (a) VGSQ if IDQ 16 mA and (b) IDQ if VGSQ 5 V.
(a) Using the given data in (4.6) leads to IDon IDQ 1 VGSQ =VT
8 10 3 32 mA 1 4:5 3 2
Rearrangement of (4.6) now allows solution for VGSQ : " "   #   # IDQ 1=2 16 1=2 VGSQ VT 1 3 1 0:88 V 32 IDon (b) By (4.6),     VGSQ 2 5 2 32 10 3 1 14:22 mA IDQ IDon 1 3 VT
CHAP. 4]
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