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We have, rst, Rac RD kRL 3 103 1 103 0:75 k 3 103 1 103
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An ac load line must be added to Fig. 4-9; it passes through the Q point and intersects the vDS axis at VDSQ IDQ Rac 11:3 1:4 10 3 0:75 103 12:35 V Now we construct an auxiliary time axis through the Q point and perpendicular to the ac load line; on it, we construct the waveform vgs vi as it swings 1 V along the ac load line about the Q point. An additional auxiliary time axis is constructed perpendicular to the vDS axis, to display the output voltage vo vds as vgs swings along the ac load line.
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If, instead of depending on the enhanced channel (see Fig. 4-7) for conduction, the region between the two heavily doped n regions of the MOSFET is made up of lightly doped n material, a depletion-enhancement-mode MOSFET can be formed with drain characteristics as
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CHAP. 4]
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CHARACTERISTICS OF FIELD-EFFECT TRANSISTORS AND TRIODES
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iD , mA
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LGS = 0 _1 _2 _3 LDS , V
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VGS off = _ 4 V
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Fig. 4-26
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displayed by Fig. 4-26, where vGS may be either positive or negative. Construct a transfer characteristic for the drain characteristics of Fig. 4-26, and clearly label the regions of depletion-mode and enhancement-mode operation.
If a constant value of vDS VGSon 4 V is taken as indicated by the broken line on Fig. 4-26, the transfer characteristic of Fig. 4-27 results. vGS 0 is the dividing line between depletion- and enhancementmode operation.
iD, mA
Depletion mode
Enhancement mode
D on
LDS = 4 V
VGS off
VGS on IDSS
LGS, V
Fig. 4-27
A common-gate JFET ampli er is shown in Fig. 4-28. The JFET obeys (4.2). If IDSS 10 mA, Vp0 4 V; VDD 15 V; R1 R2 10 k; RD 500 , and RS 2 k, determine (a) VGSQ , (b) IDQ , and (c) VDSQ . Assume iG 0.
(a) By KVL, VGSQ R2 V IDQ RS R1 R2 DD 1
CHARACTERISTICS OF FIELD-EFFECT TRANSISTORS AND TRIODES
[CHAP. 4
3 RD
4 R1 R2 5 VDD
Fig. 4-28
Solving (1) for IDQ and equating the result to the right side of (4.2) yield R2   V VGSQ VGSQ 2 R1 R2 DD IDSS 1 RS Vp0 Rearranging leads to a quadratic in VGSQ , !   2 Vp0 R2 VDD 2 2 VGSQ 2Vp0 0 VGSQ Vp0 1 IDSS RS R1 R2 IDSS RS or, with known values substituted,
2 VGSQ 8:8VGSQ 10 0
Solving for VGSQ and disregarding the extraneous root VGSQ 7:46 < Vp0 , we determine that VGSQ 1:34 V. (b) By (4.2),     VGSQ 2 1:34 2 IDQ IDSS 1 10 10 3 1 4:42 mA 4 Vp0 (c) By KVL, VDSQ VDD IDQ RS RD 15 4:42 10 3 2 103 500 3:95 V
For a triode with plate characteristics given by Fig. 4-29, nd (a) the perveance  and (b) the ampli cation factor .
(a) The perveance can be evaluated at any point on the vG 0 curve. Choosing the point with coordinates iP 15 mA and vP 100 V, we have, from (4.9),  iP
3=2 vP
15 10 3 15 A=V3=2 1003=2 From (4.9), for the point
(b) The ampli cation factor is most easily evaluated along the vP axis. iP 0; vP 100 V; vG 4 V, we obtain  vP 100 25 4 vG
The ampli er of Example 4.7 has plate current iP IP ip 8 cos !t mA
CHAP. 4]
CHARACTERISTICS OF FIELD-EFFECT TRANSISTORS AND TRIODES
LG = 0 V
iP, mA
_2 _4 _6 _8 _ 10
11.3 10 8.1
iP, mA
Q _ 12
LP, V
L P, V
Fig. 4-29
Determine (a) the power delivered by the plate supply voltage VPP , (b) the average power delivered to the load RL , and (c) the average power dissipated by the plate of the triode. (d) If the tube has a plate rating of 2 W, is it being properly applied
(a) The power supplied by the source VPP is found by integration over a period of the ac waveform: 1 T V i dt VPP IP 300 8 10 3 2:4 W PPP T 0 PP P 1 PL T T
2 iP RL
dt
2 RL IP
2 Ip
10 10
1 10 3 p 8 10 2
3 2
!2 3 5 0:645 W
The average power dissipated by the plate is PP PPP PL 2:4 0:645 1:755 W
CHARACTERISTICS OF FIELD-EFFECT TRANSISTORS AND TRIODES
[CHAP. 4
(d) The tube is not properly applied. If the signal is removed (so that iP 0), then the plate dissipation increases to PP PPP 2:4 W, which exceeds the power rating.
The plate e ciency of a vacuum-tube ampli er is de ned as the ratio of ac signal power delivered to the load to plate supply power, or PLac =PPP . (a) Calculate the plate e ciency of the ampli er of Problem 4.25. (b) What is the maximum possible plate e ciency for this ampli er without changing the Q point or clipping the signal
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