barcode fonts for ssrs (a) The equivalent circuit (with current-source JFET model) is given in Fig. 7-18. vgs vi vL in Software

Maker Code39 in Software (a) The equivalent circuit (with current-source JFET model) is given in Fig. 7-18. vgs vi vL

(a) The equivalent circuit (with current-source JFET model) is given in Fig. 7-18. vgs vi vL
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Fig. 7-18 Using vi and vL as node voltages, we have vi vL RG 1 1 1 1 1 1 1 1 Req rds RS2 RL 30 103 1:2 103 1 103 536 ii 2
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By KCL and Ohm s law, vL ii gm vgs Req Substitution of (1) and (2) into (3) and rearrangement lead to Av gm RG 1 Req vL 0:002 1 106 1 536 0:517 vi RG gm RG 1 Req 1 106 0:002 1 106 1 536 3
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CHAP. 7]
SMALL-SIGNAL MIDFREQUENCY FET AND TRIODE AMPLIFIERS
(b) The current-gain ratio follows from part a as Ai iL vL =RL Av RG 0:517 1 106 1070:4 ii vi vL =RG 1 Av RL 1 0:517 1 103 ii vi vL vi 1 Av RG RG (4)
From (2), Rin is found directly from (4) as Rin
vi RG 1 106 2:07 M ii 1 Av 1 0:517
(d) We remove RL and connect a driving-point source oriented such that vdp vL . With vi deactivated (shorted), vgs vdp . Then, by KCL,     1 1 1 1 1 1 idp vdp gm gm vgs vdp RS2 rds RG RS2 rds RG vdp 1 1 and 348:7  Ro 1 1 1 1 1 1 idp gm 0:002 3 3 6 RS2 rds RG 1:2 10 30 10 1 10
Use the small-signal equivalent circuit to predict the peak values of id and vds in Example 4.3. Compare your results with that of Example 4.3, and comment on any di erences.
The values of gm and rds for operation near the Q point of Fig. 4-6 were determined in Problem 7.1. We may use the current-source model of Fig. 7-1(a) to form the equivalent circuit of Fig. 4-5. In that circuit, with vgs sin t V, Ohm s law requires that vds gm vgs rds kRD Thus, Also, from Fig. 7-1(a), id gm vgs so Idm vds rds V 1 gm Vgsm dsm 1:5 10 3 1 1:513 mA rds 75 103 gm rds RD vgs 1:5 10 3 75 103 3 103 vgs 4:33vgs rds RD 75 103 3 103 Vdsm 4:33Vgsm 4:33 1 4:33 V
The 1-V excursion of vgs leads to operation over a large portion of the nonlinear drain characteristics. Consequently, the small-signal equivalent circuit predicts greater positive peaks and smaller negative peaks of id and vds than the graphical solution of Example 4.3, which inherently accounts for the nonlinearities.
For the JFET drain characteristics of Fig. 4-2(a), take vDS as the dependent variable [so that vDS f vGS ; iD and derive the voltage-source small-signal model.
For small variations about a Q point, the chain rule gives @v @v vds vDS % dvDS DS vgs DS id @vGS Q @iD Q Now we may de ne @vDS  @vGS Q @vDS rds @iD Q
If the JFET operates in the pincho region, then gate current is negligible and (1) is satis ed by the equivalent circuit of Fig. 7-1(b).
SMALL-SIGNAL MIDFREQUENCY FET AND TRIODE AMPLIFIERS
[CHAP. 7
Find a current-source small-signal equivalent circuit for the CD FET ampli er.
Norton s theorem can be applied to the voltage-source model of Fig. 7-12(b). The open-circuit voltage at terminals S; D (with RS removed) is voc The short-circuit current at terminals S; D is  v   1 gd v gm vgd rds =  1 rds gd  v  1 gd 1
The Norton impedance is found as the ratio of (1) to (2):  v voc  1 gd  RN  1 gm iSC gm vgd The equivalent circuit is given in Fig. 7-19.
Usually,  ) 1 and, thus, RN % 1=gm .
S id m R ( m + 1)gm S + Lo _
+ RG
gm Lgd
Fig. 7-19
Replace the JFET of Fig. 7-5 with the n-channel MOSFET that has the parameters of Example 4.4 except Vto 4 V. Let R1 200 k, R2 600 k, RD RS 2 k, RL 3 k, CC1 CC2 CS 100 F, and VDD 15 V. Assume vS 0:250 sin 2 104 t V for computation purposes and determine the voltage gain of this ampli er circuit using SPICE methods.
The netlist code below describes the MOSFET ampli er circuit:
Prb7_15.CIR vs 1 0 SIN(0V 0.25V 10kHz) VDD 5 0 DC 15V CC1 1 2 100uF CC2 3 6 100uF CS 4 0 100uF R1 2 0 200kohm R2 5 2 600kohm RD 5 3 2kohm RS 4 0 2kohm RL 6 0 3kohm M 3 2 4 4 NMOSG .MODEL NMOSG NMOS (Vto=-4V Kp=0.0008ApVsq + Rd=1ohm Rg=1kohm) .TRAN 1us 0.1ms .PROBE .END
Execute hPrb7_15.CIRi and use the Probe and FFT features of PSpice to plot the instantaneous waveforms of vS and vL along with their Fourier spectra as shown by Fig. 7-20. The voltage gain follows from ratio of
CHAP. 7]
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